Volume 14; Issue 3

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International Journal of High Speed Electronics and Systems
Volume 14; Issue 3

International Journal of High Speed Electronics and Systems

Volume 14; Issue 3

1

MBE-Grown AlGaN/GaN HEMTs on SiC

RAJAN, SIDDHARTH, CHAKRABORTY, ARPAN, MISHRA, UMESH K., POBLENZ, CHRISTIANE, WALTEREIT, PATRICK, SPECK, JAMES S.

Journal:

International Journal of High Speed Electronics and Systems

Year:

2004

Language:

english

File:

PDF, 326 KB

english, 2004

2

Author Index

Journal:

International Journal of High Speed Electronics and Systems

Year:

2004

Language:

english

File:

PDF, 74 KB

english, 2004

3

NATIVE DEFECT COMPENSATION IN III-ANTIMONIDE BULK SUBSTRATES

PINO, ROBINSON, KO, YOUNGOK, DUTTA, PARTHA S.

Journal:

International Journal of High Speed Electronics and Systems

Year:

2004

Language:

english

File:

PDF, 367 KB

english, 2004

4

Organizing Committee

Journal:

International Journal of High Speed Electronics and Systems

Year:

2004

Language:

english

File:

PDF, 48 KB

english, 2004

5

PREFACE

Journal:

International Journal of High Speed Electronics and Systems

Year:

2004

Language:

english

File:

PDF, 107 KB

english, 2004

6

SPICE MODEL OF AlGaN/GaN HEMTs AND SIMULATION OF VCO AND POWER AMPLIFIER

ISLAM, SYED S., ANWAR, A. F. M.

Journal:

International Journal of High Speed Electronics and Systems

Year:

2004

Language:

english

File:

PDF, 273 KB

english, 2004

7

LEAKY SURFACE ACOUSTIC WAVES IN SINGLE-CRYSTAL AlN SUBSTRATE

BU, GANG, CIPLYS, DAUMANTAS, SHUR, MICHAEL S., SCHOWALTER, LEO J., SCHUJMAN, SANDRA B., GASKA, REMIS

Journal:

International Journal of High Speed Electronics and Systems

Year:

2004

Language:

english

File:

PDF, 386 KB

english, 2004

8

ANALYTICAL MODEL FOR NON-SELF ALIGNED BURIED P-LAYER SiC MESFET

GUPTA, R. S., AGGARWAL, SANDEEP KUMAR, GUPTA, RITESH, GUPTA, MRIDULA, HALDAR, SUBHASIS

Journal:

International Journal of High Speed Electronics and Systems

Year:

2004

Language:

english

File:

PDF, 290 KB

english, 2004

9

TEMPERATURE DEPENDENT I-V CHARACTERISTICS OF AlGaN/GaN HBTS AND GaN BJTS

XING, HUILI G., MISHRA, UMESH K.

Journal:

International Journal of High Speed Electronics and Systems

Year:

2004

Language:

english

File:

PDF, 363 KB

english, 2004

10

A NEW FIELD-PLATED GaN HEMT STRUCTURE WITH IMPROVED POWER AND NOISE PERFORMANCE

XU, HONGTAO, SANABRIA, CHRISTOPHER, CHINI, ALESSANDRO, WEI, YUN, HEIKMAN, STEN, KELLER, STACIA, MISHRA, UMESH K., YORK, ROBERT A.

Journal:

International Journal of High Speed Electronics and Systems

Year:

2004

Language:

english

File:

PDF, 288 KB

english, 2004

11

Conference Program

Journal:

International Journal of High Speed Electronics and Systems

Year:

2004

Language:

english

File:

PDF, 128 KB

english, 2004

12

HIGH POWER, DRIFT-FREE 4H-SiC PIN DIODES

DAS, MRINAL K., SUMAKERIS, JOSEPH J., HULL, BRETT A., RICHMOND, JIM, KRISHNASWAMI, SUMI, POWELL, ADRIAN R.

Journal:

International Journal of High Speed Electronics and Systems

Year:

2004

Language:

english

File:

PDF, 404 KB

english, 2004

13

OMNI-DIRECTIONAL REFLECTOR USING A LOW REFRACTIVE INDEX MATERIAL

XI, J.-Q., OJHA, MANAS, CHO, WOOJIN, GESSMANN, TH., SCHUBERT, E. F., PLAWSKY, J. L., GILL, W. N.

Journal:

International Journal of High Speed Electronics and Systems

Year:

2004

Language:

english

File:

PDF, 436 KB

english, 2004

14

STABLE HIGH POWER GaN-ON-GaN HEMT

CHU, K. K., CHAO, P. C., WINDYKA, J. A.

Journal:

International Journal of High Speed Electronics and Systems

Year:

2004

Language:

english

File:

PDF, 558 KB

english, 2004

15

TUNNEL DIODE/TRANSISTOR DIFFERENTIAL COMPARATOR

LIU, QINGMIN, SUTAR, SURAJIT, SEABAUGH, ALAN

Journal:

International Journal of High Speed Electronics and Systems

Year:

2004

Language:

english

File:

PDF, 363 KB

english, 2004

16

NOISE CHARACTERISTICS OF 340 nm AND 280 nmGaN-BASED LIGHT EMITTING DIODES

SAWYER, SHAYLA, RUMYANTSEV, SERGEY L., PALA, NEZIH, SHUR, MICHAEL S., BILENKO, YURIY, GASKA, REMIS, KOSTERIN, PAVEL V., SALZBERG, BRIAN M.

Journal:

International Journal of High Speed Electronics and Systems

Year:

2004

Language:

english

File:

PDF, 234 KB

english, 2004

17

TEMPERATURE DEPENDENCE OF TERAHERTZ EMISSION FROM SILICON DEVICES DOPED WITH BORON

TROEGER, R. T., ADAM, T. N., RAY, S. K., LV, P.-C., KIM, S., KOLODZEY, J.

Journal:

International Journal of High Speed Electronics and Systems

Year:

2004

Language:

english

File:

PDF, 314 KB

english, 2004

18

DEPENDENCE OF RF PERFORMANCE OF GaN/AlGaN HEMTS UPON AlGaN BARRIER LAYER VARIATION

FARACLAS, ELIAS, WEBSTER, RICHARD T., BRANDES, GEORGE, ANWAR, A. F. M.

Journal:

International Journal of High Speed Electronics and Systems

Year:

2004

Language:

english

File:

PDF, 287 KB

english, 2004

19

NUMERICAL INVESTIGATION OF THE EFFECT OF DOPING PROFILES ON THE HIGH FREQUENCY PERFORMANCE OF InP/InGaAs SUPER SCALED HBTs

VEKSLER, DMITRY, SHUR, MICHAEL S., HOUTSMA, V. E., WEIMANN, N. G., CHEN, Y. K.

Journal:

International Journal of High Speed Electronics and Systems

Year:

2004

Language:

english

File:

PDF, 524 KB

english, 2004

20

GaN MOS-HEMT USING ATOMIC LAYER DEPOSITION Al 2 O 3 AS GATE DIELECTRIC AND SURFACE PASSIVATION

Ye, P. D., Yang, B., Ng, K. K., Bude, J., Wilk, G. D., Halder, S., Hwang, J. C. M.

Journal:

International Journal of High Speed Electronics and Systems

Year:

2004

Language:

english

File:

PDF, 296 KB

english, 2004

21

BENCHMARK RESULTS FOR HIGH-SPEED 4-BIT ACCUMULATORS IMPLEMENTED IN INDIUM PHOSPHIDE DHBT TECHNOLOGY

TURNER, STEVEN EUGENE, KOTECKI, DAVID E.

Journal:

International Journal of High Speed Electronics and Systems

Year:

2004

Language:

english

File:

PDF, 254 KB

english, 2004

22

SELF-GUIDING IN LOW-INDEX-CONTRAST PLANAR PHOTONIC CRYSTALS

CHEN, CAIHUA, LU, ZHAOLIN, SHI, SHOUYUAN, PRATHER, DENNIS W.

Journal:

International Journal of High Speed Electronics and Systems

Year:

2004

Language:

english

File:

PDF, 541 KB

english, 2004

23

LIFETIME OF NONEQUILIBRIUM CARRIERS IN AlGaN EPILAYERS WITH HIGH Al MOLAR FRACTION

MICKEVICIUS, J., ALEKSIEJUNAS, R., SHUR, M. S., ZHANG, J. P., FAREED, Q., GASKA, R., TAMULAITIS, G.

Journal:

International Journal of High Speed Electronics and Systems

Year:

2004

Language:

english

File:

PDF, 263 KB

english, 2004

24

UNSTRAINED InAlN/GaN HEMT STRUCTURE

NEUBURGER, M., ZIMMERMANN, T., KOHN, E., DADGAR, A., SCHULZE, F., KRTSCHIL, A., GÜNTHER, M., WITTE, H., BLÄSING, J., KROST, A., DAUMILLER, I., KUNZE, M.

Journal:

International Journal of High Speed Electronics and Systems

Year:

2004

Language:

english

File:

PDF, 224 KB

english, 2004

25

DESIGN OF HIGH VOLTAGE 4H-SiC SUPERJUNCTION SCHOTTKY RECTIFIERS

Zhu, Lin, Losee, Peter, Chow, T. Paul

Journal:

International Journal of High Speed Electronics and Systems

Year:

2004

Language:

english

File:

PDF, 549 KB

english, 2004

26

THICK GaN LAYER GROWN BY Ga VAPOR TRANSPORT TECHNIQUE

WU, HUAQIANG, KONKAPAKA, PHANIKUMAR, MAKAROV, YURI, SPENCER, MICHAEL G.

Journal:

International Journal of High Speed Electronics and Systems

Year:

2004

Language:

english

File:

PDF, 610 KB

english, 2004

27

HIGH-VOLTAGE DIAMOND SCHOTTKY RECTIFIERS

HUANG, W., CHOW, T. P., YANG, J., BUTLER, J. E.

Journal:

International Journal of High Speed Electronics and Systems

Year:

2004

Language:

english

File:

PDF, 727 KB

english, 2004

28

ANALYSIS OF OPERATIONAL TRANSCONDUCTANCE AMPLIFIER FOR APPLICATION IN GHz FREQUENCY RANGE

GHORI, A., GHOSH, P.

Journal:

International Journal of High Speed Electronics and Systems

Year:

2004

Language:

english

File:

PDF, 217 KB

english, 2004

29

ION IMPLANTED SiC STATIC INDUCTION TRANSISTOR WITH 107 W OUTPUT POWER AND 59% POWER ADDED EFFICIENCY UNDER CW OPERATION AT 750 MHZ

DE SALVO, G. C., ESKER, P. M., FLINT, T. A., OSTOP, J. A., STEWART, E. J., KNIGHT, T. J., PETROSKY, K. J., VAN CAMPEN, S. D., CLARKE, R. C., BATES, G. M.

Journal:

International Journal of High Speed Electronics and Systems

Year:

2004

Language:

english

File:

PDF, 459 KB

english, 2004

30

ANALYSIS OF GaN HBT STRUCTURES FOR HIGH POWER, HIGH EFFICIENCY MICROWAVE AMPLIFIERS

KEOGH, D. M., LI, J. C., CONWAY, A. M., QIAO, D., RAYCHAUDHURI, S., ASBECK, P. M., DUPUIS, R. D., FENG, M.

Journal:

International Journal of High Speed Electronics and Systems

Year:

2004

Language:

english

File:

PDF, 584 KB

english, 2004

31

High Speed 0.9 μm Lateral p-i-n Photodetectors Fabricated in a Standard Commercial GaAs VLSI Process

GIZIEWICZ, WOJCIECH P., FONSTAD, CLIFTON G., PRASAD, SHEILA

Journal:

International Journal of High Speed Electronics and Systems

Year:

2004

Language:

english

File:

PDF, 316 KB

english, 2004

32

ATOMICALLY FLAT III-ANTIMONIDE EPILAYERS GROWN USING LIQUID PHASE EPITAXY

KUMAR, ANIKA, SRIDARAN, SUJATHA, DUTTA, P. S.

Journal:

International Journal of High Speed Electronics and Systems

Year:

2004

Language:

english

File:

PDF, 609 KB

english, 2004

33

SELECTIVE DRY ETCHING OF GaN OVER AlGaN IN BCL 3 /SF 6 MIXTURES

BUTTARI, D., CHINI, A., CHAKRABORTY, A., MCCARTHY, L., XING, H., PALACIOS, T., SHEN, L., KELLER, S., MISHRA, U. K.

Journal:

International Journal of High Speed Electronics and Systems

Year:

2004

Language:

english

File:

PDF, 333 KB

english, 2004

34

HIGH LINEARITY GaN HEMT POWER AMPLIFIER WITH PRE-LINEARIZATION GATE DIODE

XIE, SHOUXUAN, PAIDI, VAMSI, HEIKMAN, STEN, SHEN, LIKUN, CHINI, ALESSANDRO, MISHRA, UMESH K., RODWELL, MARK J. W., LONG, STEPHEN I.

Journal:

International Journal of High Speed Electronics and Systems

Year:

2004

Language:

english

File:

PDF, 300 KB

english, 2004

35

NOISE AND THZ RECTIFICATION CHARACTERISTICS OF ZERO-BIAS QUANTUM TUNNELING SB-HETEROSTRUCTURE DIODES

LUUKANEN, ARTTU, GROSSMAN, ERICH N., MOYER, HARRIS P., SCHULMAN, JOEL N.

Journal:

International Journal of High Speed Electronics and Systems

Year:

2004

Language:

english

File:

PDF, 347 KB

english, 2004

36

DEPENDENCE OF ELECTRON MOBILITY ON EPI CHANNEL DOPING IN GaN MOSFETS

RUAN, J., MATOCHA, K., HUANG, W., CHOW, T. P.

Journal:

International Journal of High Speed Electronics and Systems

Year:

2004

Language:

english

File:

PDF, 272 KB

english, 2004

37

LOW FREQUENCY NOISE PARAMETERS IN AN AlGaN/GaN HETEROSTRUCTURE WITH 33% AND 75% Al MOLE FRACTION

VITUSEVICH, S. A., DANYLYUK, S. V., KLEIN, N., PETRYCHUK, M. V., BELYAEV, A. E., VERTIATCHIKH, A., EASTMAN, L. F.

Journal:

International Journal of High Speed Electronics and Systems

Year:

2004

Language:

english

File:

PDF, 361 KB

english, 2004

38

JUNCTION-TEMPERATURE MEASUREMENTS IN GaN UV LIGHT-EMITTING DIODES USING THE DIODE FORWARD VOLTAGE

XI, Y., SCHUBERT, E. F.

Journal:

International Journal of High Speed Electronics and Systems

Year:

2004

Language:

english

File:

PDF, 325 KB

english, 2004

39

TRAP BEHAVIOR IN AlGaN/GaN HEMTs BY POST-GATE-ANNEALING

KIM, HYEONGNAM, LEE, JAESUN, LU, WU

Journal:

International Journal of High Speed Electronics and Systems

Year:

2004

Language:

english

File:

PDF, 304 KB

english, 2004

40

EFFECTS OF BUFFER LAYER THICKNESS AND DOPING CONCENTRATION ON SiC MESFET CHARACTERISTICS

MUKHERJEE, SANKHA S., ISLAM, SYED S.

Journal:

International Journal of High Speed Electronics and Systems

Year:

2004

Language:

english

File:

PDF, 543 KB

english, 2004

41

ANALYSIS OF HIGH DC CURRENT GAIN STRUCTURES FOR GaN/InGaN/GaN HBTs

LI, JAMES C., KEOGH, DAVID M., RAYCHAUDHURI, SOUROBH, CONWAY, ADAM, QIAO, DONGJIANG, ASBECK, PETER M.

Journal:

International Journal of High Speed Electronics and Systems

Year:

2004

Language:

english

File:

PDF, 349 KB

english, 2004

42

INFLUENCE OF THE N-DIFFUSION LAYER ON THE CHANNEL CURRENT AND THE BREAKDOWN VOLTAGE IN 4H-SiC SIT

CHOI, YOUNG CHUL, CHA, HO-YOUNG, EASTMAN, LESTER F., SPENCER, MICHAEL G.

Journal:

International Journal of High Speed Electronics and Systems

Year:

2004

Language:

english

File:

PDF, 337 KB

english, 2004

43

TWO-DIMENSIONAL ANALYTICAL MODELING AND SIMULATION OF RETROGRADE DOPED HMG MOSFET

GUPTA, R. S., GOEL, KIRTI, GUPTA, MRIDULA, SAXENA, MANOJ

Journal:

International Journal of High Speed Electronics and Systems

Year:

2004

Language:

english

File:

PDF, 306 KB

english, 2004

44

Participant Index

Journal:

International Journal of High Speed Electronics and Systems

Year:

2004

Language:

english

File:

PDF, 60 KB

english, 2004

45

NOISE CHARACTERISTICS OF FIELD-PLATED GAN HEMTS

WU, Y.-F., MOORE, M., WISLEDER, T., CHAVARKAR, P. M., PARIKH, P., SAXLER, A.

Journal:

International Journal of High Speed Electronics and Systems

Year:

2004

Language:

english

File:

PDF, 154 KB

english, 2004

46

ELECTRICAL EFFECTS OF DNA MOLECULES ON SILICON FIELD EFFECT TRANSISTOR

XUAN, G., KOLODZEY, J., KAPOOR, V., GONYE, G.

Journal:

International Journal of High Speed Electronics and Systems

Year:

2004

Language:

english

File:

PDF, 279 KB

english, 2004

47

2 KV 4H-SiC DMOSFETS FOR LOW LOSS, HIGH FREQUENCY SWITCHING APPLICATIONS

RYU, SEI-HYUNG, KRISHNASWAMI, SUMI, DAS, MRINAL, RICHMOND, JAMES, ANANT AGARWAL, ANANT, PALMOUR, JOHN, SCOFIELD, JAMES

Journal:

International Journal of High Speed Electronics and Systems

Year:

2004

Language:

english

File:

PDF, 250 KB

english, 2004

48

SIMULATION STUDY ON BREAKDOWN BEHAVIOR OF FIELD-PLATE SiC MESFETs

CHA, HO-YOUNG, CHOI, Y. C., EASTMAN, LESTER F., SPENCER, MICHAEL G.

Journal:

International Journal of High Speed Electronics and Systems

Year:

2004

Language:

english

File:

PDF, 260 KB

english, 2004

49

VERTICAL SCALING OF TYPE I InP HBT WITH F T > 500 GHZ

LAI, J. W., HAFEZ, W., FENG, M.

Journal:

International Journal of High Speed Electronics and Systems

Year:

2004

Language:

english

File:

PDF, 424 KB

english, 2004

50

FABRICATION OF SELF-ALIGNED T-GATE AlGaN/GaN HIGH ELECTRON MOBILITY TRANSISTORS

LEE, JAESUN, LIU, DONGMIN, KIM, HYEONGNAM, SCHUETTE, MICHAEL L., LU, WU, FLYNN, JEFFREY S., BRANDES, GEORGE R.

Journal:

International Journal of High Speed Electronics and Systems

Year:

2004

Language:

english

File:

PDF, 327 KB

english, 2004

51

PHOTOCAPACITANCE OF GaAs THIN-FILM STRUCTURES FABRICATED ON A SEMI-INSULATING COMPENSATED SUBSTRATE

GOREV, NIKOLAI B., KODZHESPIROVA, INNA F., PRIVALOV, EVGENY N., KHUCHUA, NINA, KHVEDELIDZE, LEVAN, SHUR, MICHAEL S.

Journal:

International Journal of High Speed Electronics and Systems

Year:

2004

Language:

english

File:

PDF, 441 KB

english, 2004

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