GaN MOS-HEMT USING ATOMIC LAYER DEPOSITION Al...

International Journal of High Speed Electronics and Systems 2004 / 09 Vol. 14; Iss. 3

GaN MOS-HEMT USING ATOMIC LAYER DEPOSITION Al 2 O 3 AS GATE DIELECTRIC AND SURFACE PASSIVATION

Ye, P. D., Yang, B., Ng, K. K., Bude, J., Wilk, G. D., Halder, S., Hwang, J. C. M.
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Volume:
14
Language:
english
Journal:
International Journal of High Speed Electronics and Systems
DOI:
10.1142/S0129156404002843
Date:
September, 2004
File:
PDF, 296 KB
english, 2004
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