Secondary ion mass spectrometry measurements of deuterium...

Radiation Effects and Defects in Solids 1989 / 12 Vol. 111-112; Iss. 1-2

Secondary ion mass spectrometry measurements of deuterium penetration into silicon by low pressure RF glow discharges

Oehrlein, Gottlieb S., Scilla, Gerald J.
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Volume:
111-112
Language:
english
Journal:
Radiation Effects and Defects in Solids
DOI:
10.1080/10420158908213004
Date:
December, 1989
File:
PDF, 639 KB
english, 1989
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