Volume 111-112; Issue 1-2

Radiation Effects and Defects in Solids

Volume 111-112; Issue 1-2
1

Electrical properties of DX centers in GaAs and AlGaAs

Year:
1989
Language:
english
File:
PDF, 1001 KB
english, 1989
2

Persistent photocurrents in semi-insulating gallium arsenide

Year:
1989
Language:
english
File:
PDF, 452 KB
english, 1989
4

Electronic effects on defect behavior in semiconductors

Year:
1989
Language:
english
File:
PDF, 457 KB
english, 1989
5

The diffusivity of silicon self-interstitials

Year:
1989
Language:
english
File:
PDF, 993 KB
english, 1989
6

Erratum

Year:
1989
Language:
english
File:
PDF, 65 KB
english, 1989
7

Vacancy and interstitial diffusion simulator

Year:
1989
Language:
english
File:
PDF, 142 KB
english, 1989
9

Preface

Year:
1989
Language:
english
File:
PDF, 188 KB
english, 1989
12

Electron instabilities due to dislocation dangling bonds in silicon crystals

Year:
1989
Language:
english
File:
PDF, 230 KB
english, 1989
13

Defects and photorefractive effects in GaAs

Year:
1989
Language:
english
File:
PDF, 383 KB
english, 1989
14

Transient spectroscopy and disorder

Year:
1989
Language:
english
File:
PDF, 337 KB
english, 1989
15

Frenkel pairs in silicon and germanium

Year:
1989
Language:
english
File:
PDF, 1.04 MB
english, 1989
17

Some travelling wave reaction diffusion problems

Year:
1989
Language:
english
File:
PDF, 239 KB
english, 1989
18

On dislocation generation in semiconductor crystals

Year:
1989
Language:
english
File:
PDF, 975 KB
english, 1989
20

A novel theory of radiation damage at high doses

Year:
1989
Language:
english
File:
PDF, 999 KB
english, 1989
21

Electron beam epitaxy of alloy semiconductors

Year:
1989
Language:
english
File:
PDF, 1.55 MB
english, 1989
24

RIE-induced damage and contamination in silicon

Year:
1989
Language:
english
File:
PDF, 711 KB
english, 1989
29

Defects in semiconductors

Year:
1989
Language:
english
File:
PDF, 727 KB
english, 1989
30

Spatial correlations in condensed phase reactions

Year:
1989
Language:
english
File:
PDF, 873 KB
english, 1989
32

Defect dynamics from uniaxial stress studies

Year:
1989
Language:
english
File:
PDF, 624 KB
english, 1989
33

Dihydrogen complexes in silicon

Year:
1989
Language:
english
File:
PDF, 287 KB
english, 1989
35

Hydrogen in the near-surface of crystalline silicon

Year:
1989
Language:
english
File:
PDF, 635 KB
english, 1989
37

High-temperature oxygen and carbon aggregates in polycrystalline silicon

Year:
1989
Language:
english
File:
PDF, 482 KB
english, 1989
40

States of hydrogen in crystalline semiconductors

Year:
1989
Language:
english
File:
PDF, 1.26 MB
english, 1989
41

Transient radiation effects on VLSI structures

Year:
1989
Language:
english
File:
PDF, 668 KB
english, 1989
42

Jim Corbett as an author and a physicist

Year:
1989
Language:
english
File:
PDF, 226 KB
english, 1989
43

Determination of the diffusion length from defect contrast by SEM-EBIC

Year:
1989
Language:
english
File:
PDF, 363 KB
english, 1989
44

Optical properties of group-V atom-vacancy pairs in silicon

Year:
1989
Language:
english
File:
PDF, 699 KB
english, 1989
45

A course on radiation technology

Year:
1989
Language:
english
File:
PDF, 309 KB
english, 1989
46

Effects of hydrogen on defect properties in germanium

Year:
1989
Language:
english
File:
PDF, 526 KB
english, 1989