Characterization of positive bias temperature instability...

Journal of Semiconductors 2015 / 01 Vol. 36; Iss. 1

Characterization of positive bias temperature instability of NMOSFET with high- k /metal gate last process

Ren, Shangqing, Tang, Bo, Xu, Hao, Luo, Weichun, Tang, Zhaoyun, Xu, Yefeng, Xu, Jing, Wang, Dahai, Li, Junfeng, Yan, Jiang, Zhao, Chao, Chen, Dapeng, Ye, Tianchun, Wang, Wenwu
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Volume:
36
Language:
english
Journal:
Journal of Semiconductors
DOI:
10.1088/1674-4926/36/1/014007
Date:
January, 2015
File:
PDF, 1.97 MB
english, 2015
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