Volume 36; Issue 1

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Journal of Semiconductors
Volume 36; Issue 1

Journal of Semiconductors

Volume 36; Issue 1

1

An analytic model to describe the relationship between conductance and frequency of heterojunction

Journal:

Journal of Semiconductors

Year:

2015

Language:

english

File:

PDF, 1.27 MB

english, 2015

2

Structural, optical and electrical properties of zinc oxide thin films deposited by a spray pyrolysis technique

Aoun, Yacine, Benhaoua, Boubaker, Gasmi, Brahim, Benramache, Said

Journal:

Journal of Semiconductors

Year:

2015

Language:

english

File:

PDF, 2.32 MB

english, 2015

3

The calculation of band gap energy in zinc oxide films

Arif, Ali, Belahssen, Okba, Gareh, Salim, Benramache, Said

Journal:

Journal of Semiconductors

Year:

2015

Language:

english

File:

PDF, 239 KB

english, 2015

4

High accuracy digital aging monitor based on PLL-VCO circuit

Zhang, Yuejun, Jiang, Zhidi, Wang, Pengjun, Zhang, Xuelong

Journal:

Journal of Semiconductors

Year:

2015

Language:

english

File:

PDF, 1.83 MB

english, 2015

5

Effect of defects on the electronic properties of WS 2 armchair nanoribbon

Ghosh, Bahniman, Gupta, Aayush

Journal:

Journal of Semiconductors

Year:

2015

Language:

english

File:

PDF, 1.44 MB

english, 2015

6

Preparation and thermal-sensitive characteristic of copper doped n-type silicon material

Fan, Yanwei, Zhou, Bukang, Wang, Junhua, Chen, Zhaoyang, Chang, Aimin

Journal:

Journal of Semiconductors

Year:

2015

Language:

english

File:

PDF, 439 KB

english, 2015

7

Numerical simulation of the effect of gold doping on the resistance to neutron irradiation of silicon diodes

Bekhouche, K., Sengouga, N., Jones, B. K.

Journal:

Journal of Semiconductors

Year:

2015

Language:

english

File:

PDF, 407 KB

english, 2015

8

Voltage reduction of 808 nm GaAsP/(Al)GaInP laser diodes with GaInAsP intermediate layer

Zhu, Zhen, Zhang, Xin, Li, Peixu, Wang, Gang, Xu, Xiangang

Journal:

Journal of Semiconductors

Year:

2015

Language:

english

File:

PDF, 3.50 MB

english, 2015

9

First-principles study on electronic structure and conductivity of Sn-doped Ga 1.375 In 0.625 O 3

Zhao, Yinnü, Yan, Jinliang, Xu, Chengyang

Journal:

Journal of Semiconductors

Year:

2015

Language:

english

File:

PDF, 2.10 MB

english, 2015

10

Performance enhancement of c-CESL-strained 95-nm-gate NMOSFET using trench-based structure

Zhao, Di, Luo, Qian, Wang, Xiangzhan, Yu, Qi, Cui, Wei, Tan, Kaizhou

Journal:

Journal of Semiconductors

Year:

2015

Language:

english

File:

PDF, 2.10 MB

english, 2015

11

A novel SOI pressure sensor for high temperature application

Li, Sainan, Liang, Ting, Wang, Wei, Hong, Yingping, Zheng, Tingli, Xiong, Jijun

Journal:

Journal of Semiconductors

Year:

2015

Language:

english

File:

PDF, 772 KB

english, 2015

12

Next generation barrier CMP slurry with novel weakly alkaline chelating agent

Fan, Shiyan, Liu, Yuling, Sun, Ming, Tang, Jiying, Yan, Chenqi, Li, Hailong, Wang, Shengli

Journal:

Journal of Semiconductors

Year:

2015

Language:

english

File:

PDF, 6.94 MB

english, 2015

13

Insights into channel potentials and electron quasi-Fermi potentials for DG tunnel FETs

Bulusu, Anand, Dasgupta, S.

Journal:

Journal of Semiconductors

Year:

2015

File:

PDF, 933 KB

2015

14

GaN HEMT with AlGaN back barrier for high power MMIC switch application

Ren, Chunjiang, Shen, Hongchang, Li, Zhonghui, Chen, Tangsheng, Zhang, Bin, Gao, Tao

Journal:

Journal of Semiconductors

Year:

2015

Language:

english

File:

PDF, 1.55 MB

english, 2015

15

Thermionic emission theory and diffusion theory applied to CdTe PV devices

Zhang, Rumin, Ruan, Yu, Li, Zhengyi, Cheng, Sichong, Liu, Dijun

Journal:

Journal of Semiconductors

Year:

2015

Language:

english

File:

PDF, 266 KB

english, 2015

16

All-optical NRZ wavelength conversion using a Sagnac loop with optimized SOA characteristics

Jiang, Xiyan, Wang, Jin, Gao, Chen, Xu, Ji, Wan, Hongdan

Journal:

Journal of Semiconductors

Year:

2015

Language:

english

File:

PDF, 651 KB

english, 2015

17

Influence of N-type doping on the oxidation rate in n-type 6H-SiC

Guo, Hui, Zhao, Yaqiu, Zhang, Yuming, Ling, Xianbao

Journal:

Journal of Semiconductors

Year:

2015

Language:

english

File:

PDF, 354 KB

english, 2015

18

A 0.8–4.2 GHz monolithic all-digital PLL based frequency synthesizer for wireless communications

Zhao, Yuanxin, Gao, Yuanpei, Li, Wei, Li, Ning, Ren, Junyan

Journal:

Journal of Semiconductors

Year:

2015

Language:

english

File:

PDF, 4.03 MB

english, 2015

19

A 9–12 GHz 5-bit active LO phase shifter with a new vector sum method

Chen, Changming, Li, Wei, Li, Ning, Ren, Junyan

Journal:

Journal of Semiconductors

Year:

2015

Language:

english

File:

PDF, 1.29 MB

english, 2015

20

Computer modelling and analysis of the photodegradation effect in a-Si:H p—i—n solar cell

Bouhdjar, A.F, Ayat, L., Meftah, AM., Sengouga, N., Meftah, AF.

Journal:

Journal of Semiconductors

Year:

2015

Language:

english

File:

PDF, 720 KB

english, 2015

21

Effect of phosphorus ion implantation on back gate effect of partially depleted SOI NMOS under total dose radiation

Li, Leilei, Zhou, Xinjie, Yu, Zongguang, Feng, Qing

Journal:

Journal of Semiconductors

Year:

2015

Language:

english

File:

PDF, 492 KB

english, 2015

22

A 3 Gb/s multichannel transceiver in 65 nm CMOS technology

Zhang, Feng, Qiu, Yusong

Journal:

Journal of Semiconductors

Year:

2015

Language:

english

File:

PDF, 1.97 MB

english, 2015

23

Effect of H 2 O 2 and nonionic surfactant in alkaline copper slurry

Yuan, Haobo, Liu, Yuling, Jiang, Mengting, Chen, Guodong, Liu, Weijuan, Wang, Shengli

Journal:

Journal of Semiconductors

Year:

2015

Language:

english

File:

PDF, 1.22 MB

english, 2015

24

An improved analytical model of 4H-SiC MESFET incorporating bulk and interface trapping effects

Rao, M. Hema Lata, Murty, N. V. L. Narasimha

Journal:

Journal of Semiconductors

Year:

2015

Language:

english

File:

PDF, 1.22 MB

english, 2015

25

Redistribution of carbon atoms in Pt substrate for high quality monolayer graphene synthesis

Li, Yinying, Wu, Xiaoming, Wu, Huaqiang, Qian, He

Journal:

Journal of Semiconductors

Year:

2015

Language:

english

File:

PDF, 3.03 MB

english, 2015

26

Characterization of positive bias temperature instability of NMOSFET with high- k /metal gate last process

Ren, Shangqing, Tang, Bo, Xu, Hao, Luo, Weichun, Tang, Zhaoyun, Xu, Yefeng, Xu, Jing, Wang, Dahai, Li, Junfeng, Yan, Jiang, Zhao, Chao, Chen, Dapeng, Ye, Tianchun, Wang, Wenwu

Journal:

Journal of Semiconductors

Year:

2015

Language:

english

File:

PDF, 1.97 MB

english, 2015

27

An improved trench gate super-junction IGBT with double emitter

Dai, Weinan, Zhu, Jing, Sun, Weifeng, Du, Yicheng, Huang, Keqin

Journal:

Journal of Semiconductors

Year:

2015

Language:

english

File:

PDF, 1.04 MB

english, 2015

28

Performance analysis of InSb based QWFET for ultra high speed applications

Subash, T. D., Gnanasekaran, T., Divya, C.

Journal:

Journal of Semiconductors

Year:

2015

Language:

english

File:

PDF, 306 KB

english, 2015

29

A novel lateral cavity surface emitting laser with top sub-wavelength grating

Qi, Aiyi, Wang, Yufei, Guo, Xiaojie, Zheng, Wanhua

Journal:

Journal of Semiconductors

Year:

2015

Language:

english

File:

PDF, 6.40 MB

english, 2015