DEPENDENCE OF ELECTRON MOBILITY ON EPI CHANNEL DOPING IN...

International Journal of High Speed Electronics and Systems 2004 / 09 Vol. 14; Iss. 3

DEPENDENCE OF ELECTRON MOBILITY ON EPI CHANNEL DOPING IN GaN MOSFETS

RUAN, J., MATOCHA, K., HUANG, W., CHOW, T. P.
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Volume:
14
Language:
english
Journal:
International Journal of High Speed Electronics and Systems
DOI:
10.1142/S0129156404002855
Date:
September, 2004
File:
PDF, 272 KB
english, 2004
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