LOW FREQUENCY NOISE PARAMETERS IN AN AlGaN/GaN...

International Journal of High Speed Electronics and Systems 2004 / 09 Vol. 14; Iss. 3

LOW FREQUENCY NOISE PARAMETERS IN AN AlGaN/GaN HETEROSTRUCTURE WITH 33% AND 75% Al MOLE FRACTION

VITUSEVICH, S. A., DANYLYUK, S. V., KLEIN, N., PETRYCHUK, M. V., BELYAEV, A. E., VERTIATCHIKH, A., EASTMAN, L. F.
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Volume:
14
Language:
english
Journal:
International Journal of High Speed Electronics and Systems
DOI:
10.1142/S0129156404002806
Date:
September, 2004
File:
PDF, 361 KB
english, 2004
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