Reductions in interface defects, Dit, by post oxidation...

Reductions in interface defects, Dit, by post oxidation plasma-assisted nitridation of GaN–SiO2 interfaces in MOS devices

C. Bae, G. Lucovsky
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Volume:
72
Year:
2004
Language:
english
Pages:
5
DOI:
10.1016/j.mee.2003.12.043
File:
PDF, 278 KB
english, 2004
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