![](/img/cover-not-exists.png)
Reductions in interface defects, Dit, by post oxidation plasma-assisted nitridation of GaN–SiO2 interfaces in MOS devices
C. Bae, G. LucovskyVolume:
72
Year:
2004
Language:
english
Pages:
5
DOI:
10.1016/j.mee.2003.12.043
File:
PDF, 278 KB
english, 2004