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Stress-induced leakage current at low field in NMOS and PMOS devices with ultra-thin nitrided gate oxide
M Fadlallah, G Ghibaudo, M Bidaud, O Simonetti, F GuyaderVolume:
72
Year:
2004
Language:
english
Pages:
6
DOI:
10.1016/j.mee.2003.12.044
File:
PDF, 375 KB
english, 2004