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Gate-oxide grown on the sidewalls and base of a U-shaped Si trench: effects of the oxide and oxide/Si interface condition on the properties of vertical MOS devices
S.A. Suliman, O.O. Awadelkarim, R.S. Ridley, G.M. DolnyVolume:
72
Year:
2004
Language:
english
Pages:
6
DOI:
10.1016/j.mee.2003.12.045
File:
PDF, 218 KB
english, 2004