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A novel approach for determining the effective tunneling mass of electrons in HfO2 and other high-K alternative gate dielectrics for advanced CMOS devices
C.L Hinkle, C Fulton, R.J Nemanich, G LucovskyVolume:
72
Year:
2004
Language:
english
Pages:
6
DOI:
10.1016/j.mee.2003.12.047
File:
PDF, 224 KB
english, 2004