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A study of mixtures of HfO2 and TiO2 as high-k gate dielectrics
F. Chen, X. Bin, C. Hella, X. Shi, W.L. Gladfelter, S.A. CampbellVolume:
72
Year:
2004
Language:
english
Pages:
4
DOI:
10.1016/j.mee.2004.01.001
File:
PDF, 189 KB
english, 2004