Generation of metastable electron traps in the near...

Microelectronic Engineering 2004 Vol. 72; Iss. 1-4

Generation of metastable electron traps in the near interfacial region of SOI buried oxides by ion implantation and their effect on device properties

J.R Schwank, D.M Fleetwood, H.D Xiong, M.R Shaneyfelt, B.L Draper
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Volume:
72
Year:
2004
Language:
english
Pages:
5
DOI:
10.1016/j.mee.2004.01.032
File:
PDF, 217 KB
english, 2004
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