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Influence of SiH4 process step on physical and electrical properties of advanced copper interconnects
S. Chhun, L.G. Gosset, N. Casanova, J.F. Guillaumond, P. Dumont-Girard, X. Federspiel, R. Pantel, V. Arnal, L. Arnaud, J. TorresVolume:
76
Year:
2004
Language:
english
Pages:
7
DOI:
10.1016/j.mee.2004.07.022
File:
PDF, 478 KB
english, 2004