On the mechanism of annealing effect in electrical...

Microelectronic Engineering 2004 Vol. 76; Iss. 1-4

On the mechanism of annealing effect in electrical resistivity of sub-100 nm Ag (1% W) films

E. Glickman, A. Inberg, V. Bogush, G. Aviram, N. Croitoru, Y. Shacham-Diamand
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Volume:
76
Year:
2004
Language:
english
Pages:
8
DOI:
10.1016/j.mee.2004.07.052
File:
PDF, 473 KB
english, 2004
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