Oxide traps characterization of 45 nm MOS transistors by gate current R.T.S. noise measurements
F. Martinez, C. Leyris, G. Neau, M. Valenza, A. Hoffmann, J.C. Vildeuil, E. Vincent, F. Boeuf, T. Skotnicki, M. Bidaud, D. Barge, B. TavelVolume:
80
Year:
2005
Language:
english
Pages:
4
DOI:
10.1016/j.mee.2005.04.043
File:
PDF, 247 KB
english, 2005