Ab initio modeling of structure and defects at the HfO2/Si...

Microelectronic Engineering 2005 Vol. 80; Iss. none

Ab initio modeling of structure and defects at the HfO2/Si interface

J.L. Gavartin, L. Fonseca, G. Bersuker, A.L Shluger
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Volume:
80
Year:
2005
Language:
english
Pages:
4
DOI:
10.1016/j.mee.2005.04.097
File:
PDF, 173 KB
english, 2005
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