Novel fabrication process to realize ultra-thin...

Microelectronic Engineering 2005 Vol. 80; Iss. none

Novel fabrication process to realize ultra-thin (EOT = 0.7 nm) and ultra-low-leakage SiON gate dielectrics

D. Matsushita, K. Muraoka, K. Kato, Y. Nakasaki, S. Inumiya, K. Eguchi, M. Takayanagi
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Volume:
80
Year:
2005
Language:
english
Pages:
8
DOI:
10.1016/j.mee.2005.04.099
File:
PDF, 784 KB
english, 2005
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