![](/img/cover-not-exists.png)
Two-dimensional dopant imaging of silicon carbide devices by secondary electron potential contrast
M. Buzzo, M. Ciappa, J. Millan, P. Godignon, W. FichtnerVolume:
84
Year:
2007
Language:
english
Pages:
6
DOI:
10.1016/j.mee.2006.10.055
File:
PDF, 570 KB
english, 2007