MOS capacitors obtained by wet oxidation of n-type 4H–SiC pre-implanted with nitrogen
A. Poggi, F. Moscatelli, Y. Hijikata, S. Solmi, R. NipotiVolume:
84
Year:
2007
Language:
english
Pages:
6
DOI:
10.1016/j.mee.2007.01.241
File:
PDF, 196 KB
english, 2007