Integration of HfxTayN metal gate with SiO2 and HfOxNy gate...

Microelectronic Engineering 2007 Vol. 84; Iss. 12

Integration of HfxTayN metal gate with SiO2 and HfOxNy gate dielectrics for MOS device applications

Chang-Ta Yang, Kuei-Shu Chang-Liao, Hsin-Chun Chang, B.S. Sahu, Tzu-Chen Wang, Tien-Ko Wang, Wen-Fa Wu
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Volume:
84
Year:
2007
Language:
english
Pages:
5
DOI:
10.1016/j.mee.2007.03.003
File:
PDF, 647 KB
english, 2007
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