Process damage-free damascene metal gate technology for...

Process damage-free damascene metal gate technology for gentle integration of epitaxially grown high-k

Ralf Endres, Yordan Stefanov, Frank Wessely, Florian Zaunert, Udo Schwalke
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Volume:
85
Year:
2008
Language:
english
Pages:
5
DOI:
10.1016/j.mee.2007.03.008
File:
PDF, 962 KB
english, 2008
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