Volume 85; Issue 1

Microelectronic Engineering

Volume 85; Issue 1

1

Thermal and plasma enhanced atomic layer deposition ruthenium and electrical characterization as a metal electrode

Sang-Joon Park, Woo-Hee Kim, Han-Bo-Ram Lee, W.J. Maeng, H. Kim

Journal:

Microelectronic Engineering

Year:

2008

Language:

english

File:

PDF, 739 KB

english, 2008

2

X-ray metrology for high-k atomic layer deposited HfxZr1−xO2 films

Jesus J. Gallegos III, Dina H. Triyoso, Mark Raymond

Journal:

Microelectronic Engineering

Year:

2008

Language:

english

File:

PDF, 642 KB

english, 2008

3

A nanoanalytical investigation of elemental distributions in high-k dielectric gate stacks on silicon

F.T. Docherty, M. MacKenzie, A.J. Craven, D.W. McComb, S. De Gendt, S. McFadzean, C.M. McGilvery

Journal:

Microelectronic Engineering

Year:

2008

Language:

english

File:

PDF, 364 KB

english, 2008

4

Adhesion properties of polymethylsilsesquioxane based low dielectric constant materials by the modified edge lift-off test

B.R. Kim, Y.D. Kim, M.S. Moon, B.K. Choi, M.J. Ko

Journal:

Microelectronic Engineering

Year:

2008

Language:

english

File:

PDF, 374 KB

english, 2008

5

High breakdown voltage 4H-SiC MESFETs with floating metal strips

Jinping Zhang, Yi Ye, Chunhua Zhou, Xiaorong Luo, Bo Zhang, Zhaoji Li

Journal:

Microelectronic Engineering

Year:

2008

Language:

english

File:

PDF, 478 KB

english, 2008

6

Direct metallization of gold patterns on polyimide substrate by microcontact printing and selective surface modification

S.S. Yoon, D.O. Kim, S.C. Park, Y.K. Lee, H.Y. Chae, S.B. Jung, J.-D. Nam

Journal:

Microelectronic Engineering

Year:

2008

Language:

english

File:

PDF, 915 KB

english, 2008

7

Effect of plasma operation pressure on burn-in efficiency of an SIP–PVD chamber

Yi-Chi Lin, Ming-Yen Li, Hsiao-Che Wu, Poyo Chuang, Cheng-Sung Huang

Journal:

Microelectronic Engineering

Year:

2008

Language:

english

File:

PDF, 694 KB

english, 2008

8

High-k TixSi1−xO2 thin films prepared by co-sputtering method

Sungyeon Kim, Moon-Ho Ham, Byeong-Yun Oh, Hyun Jae Kim, Jae-Min Myoung

Journal:

Microelectronic Engineering

Year:

2008

Language:

english

File:

PDF, 439 KB

english, 2008

9

Conduction mechanisms in Ta2O5 stack in response to rapid thermal annealing

D. Spassov, E. Atanassova

Journal:

Microelectronic Engineering

Year:

2008

Language:

english

File:

PDF, 223 KB

english, 2008

10

Analysis on the mutual inductance of planar transformer in CMOS technology

Heng-Ming Hsu, Chien-Wen Tseng, Hsien-Feng Liao

Journal:

Microelectronic Engineering

Year:

2008

Language:

english

File:

PDF, 464 KB

english, 2008

11

Analysis of interface states and series resistance of MIS Schottky diodes using the current–voltage (I–V) characteristics

A. Tataroğlu, Ş. Altındal

Journal:

Microelectronic Engineering

Year:

2008

Language:

english

File:

PDF, 172 KB

english, 2008

12

Role of bonding time and temperature on the physical properties of coupled anisotropic conductive–nonconductive adhesive film for flip chip on glass technology

M.J. Rizvi, H. Lu, C. Bailey, Y.C. Chan, M.Y. Lee, C.H. Pang

Journal:

Microelectronic Engineering

Year:

2008

Language:

english

File:

PDF, 823 KB

english, 2008

13

Work function control at metal high-dielectric-constant gate oxide interfaces

K. Tse, J. Robertson

Journal:

Microelectronic Engineering

Year:

2008

Language:

english

File:

PDF, 1.17 MB

english, 2008

14

Investigation of voltage-swing effect and trap generation in high-k gate dielectric of MOS devices by charge-pumping measurement

Chun-Yuan Lu, Kuei-Shu Chang-Liao, Chun-Chang Lu, Ping-Hung Tsai, Yin Yin Kyi, Tien-Ko Wang

Journal:

Microelectronic Engineering

Year:

2008

Language:

english

File:

PDF, 1.20 MB

english, 2008

15

Characterization of strained silicon on relaxed SiGe layer made by H ion implantation and annealing in ultra-high vacuum ambient

Changchun Chen, Benhai Yu, Jiangfeng Liu, Qirun Dai

Journal:

Microelectronic Engineering

Year:

2008

Language:

english

File:

PDF, 399 KB

english, 2008

16

Process damage-free damascene metal gate technology for gentle integration of epitaxially grown high-k

Ralf Endres, Yordan Stefanov, Frank Wessely, Florian Zaunert, Udo Schwalke

Journal:

Microelectronic Engineering

Year:

2008

Language:

english

File:

PDF, 962 KB

english, 2008

17

Erratum to: “FIB-milling of photonic structures and sputtering simulation” [Microelectron. Eng. 83 (2006) 1805–1808]

Philipp M. Nellen, Victor Callegari, Rolf Brönnimann

Journal:

Microelectronic Engineering

Year:

2008

Language:

english

File:

PDF, 166 KB

english, 2008

18

On the profile of frequency dependent series resistance and surface states in Au/Bi4Ti3O12/SiO2/n-Si(MFIS) structures

F. Parlaktürk, Ş. Altındal, A. Tataroğlu, M. Parlak, A. Agasiev

Journal:

Microelectronic Engineering

Year:

2008

Language:

english

File:

PDF, 399 KB

english, 2008

19

Molecular weight and processing effects on the dissolution properties of thin poly(methyl methacrylate) films

A. Kokkinis, E.S. Valamontes, D. Goustouridis, Th. Ganetsos, K. Beltsios, I. Raptis

Journal:

Microelectronic Engineering

Year:

2008

Language:

english

File:

PDF, 264 KB

english, 2008

20

Yttrium silicide formation and its contact properties on Si(1 0 0)

Wei Huang, Guo-Ping Ru, C. Detavernier, R.L. Van Meirhaeghe, Yu-Long Jiang, Xin-Ping Qu, Bing-Zong Li

Journal:

Microelectronic Engineering

Year:

2008

Language:

english

File:

PDF, 1.78 MB

english, 2008

21

Numerical and experimental studies for the anisotropic etching of silicon with the AFM oxide lines as masks

Jen Fin Lin, Pal Jen Wei, Chih Kuang Tai, Jung Ching Chung

Journal:

Microelectronic Engineering

Year:

2008

Language:

english

File:

PDF, 978 KB

english, 2008

22

Comparative study of the influence of the solvent on the catalytic growth of carbon nanotubes

R. Engel-Herbert, H. Pforte, T. Hesjedal

Journal:

Microelectronic Engineering

Year:

2008

Language:

english

File:

PDF, 727 KB

english, 2008

23

Simulations and experiments of three-dimensional paddle shift for IC packaging

Shiang-Yu Teng, Sheng-Jye Hwang

Journal:

Microelectronic Engineering

Year:

2008

Language:

english

File:

PDF, 4.03 MB

english, 2008

24

XPS analysis with an ultra clean vacuum substrate carrier for oxidation and airborne molecular contamination prevention

B. Pelissier, H. Kambara, E. Godot, E. Veran, V. Loup, O. Joubert

Journal:

Microelectronic Engineering

Year:

2008

Language:

english

File:

PDF, 165 KB

english, 2008

25

Dielectric anisotropy in the integration of Cu–SiLK™ system

Hai-Sin Tseng, Bi-Shiou Chiou, Wen-Fa Wu, Chia-Cheng Ho

Journal:

Microelectronic Engineering

Year:

2008

Language:

english

File:

PDF, 214 KB

english, 2008

26

Effect of size and plasma treatment and the application of Weibull distribution on the breakdown of PECVD SiNx MIM capacitors

Chia-Cheng Ho, Bi-Shiou Chiou

Journal:

Microelectronic Engineering

Year:

2008

Language:

english

File:

PDF, 151 KB

english, 2008

27

Dopant effects on the thermal stability of FUSI NiSi

P. Zhao, M.J. Kim, B.E. Gnade, R.M. Wallace

Journal:

Microelectronic Engineering

Year:

2008

Language:

english

File:

PDF, 698 KB

english, 2008

28

Pattern replication in polypropylene films by hot embossing

Patrick W. Leech

Journal:

Microelectronic Engineering

Year:

2008

Language:

english

File:

PDF, 1.13 MB

english, 2008

29

Fabrication of soft reflective microoptical elements using a replication process

Teng-Kai Shih, Jeng-Rong Ho, Jui-Hao Wang, Chia-Fu Chen, Chueh-Yang Liu, Chien-Chung Chen, Wha-Tzong Whang

Journal:

Microelectronic Engineering

Year:

2008

Language:

english

File:

PDF, 751 KB

english, 2008

30

A novel overlay process for imprint lithography using load release and alignment error pre-compensation method

Jinyou Shao, Yucheng Ding, Yiping Tang, Hongzhong Liu, Bingheng Lu, Dongyin Cui

Journal:

Microelectronic Engineering

Year:

2008

Language:

english

File:

PDF, 516 KB

english, 2008

31

A replication process of metallic micro-mold by using parylene embossing and electroplating

Sung-Won Youn, Hiroshi Goto, Masaharu Takahashi, Shoji Oyama, Yasuhiko Oshinomi, Kinya Matsutani, Ryutaro Maeda

Journal:

Microelectronic Engineering

Year:

2008

Language:

english

File:

PDF, 1.45 MB

english, 2008

32

Decoupling the Fermi-level pinning effect and intrinsic limitations on p-type effective work function metal electrodes

Huang-Chun Wen, Prashant Majhi, Kisik Choi, C.S. Park, Husam N. Alshareef, H. Rusty Harris, Hongfa Luan, Hiro Niimi, Hong-Bae Park, Gennadi Bersuker, Patrick S. Lysaght, Dim-Lee Kwong, S.C. Song, Byou

Journal:

Microelectronic Engineering

Year:

2008

Language:

english

File:

PDF, 568 KB

english, 2008

33

Direct soft UV-NIL with resist incorporating carbon nanotubes

Jun-hyuk Choi, Sung-un Jung, Dae-geun Choi, Jun-ho Jeong, Eung-sug Lee

Journal:

Microelectronic Engineering

Year:

2008

Language:

english

File:

PDF, 1.19 MB

english, 2008

34

Fabrication of stamps for microcontact printing by injection molding

Amol Chandekar, Michael Alabran, Sandip K. Sengupta, Jun S. Lee, Joey L. Mead, Carol M.F. Barry, James E. Whitten, Sivasubramanian Somu, Ahmed A. Busnaina

Journal:

Microelectronic Engineering

Year:

2008

Language:

english

File:

PDF, 2.98 MB

english, 2008

35

Nanoimprint in PDMS on glass with two-level hybrid stamp

Patrick Carlberg, Lars Montelius, Jonas Tegenfeldt

Journal:

Microelectronic Engineering

Year:

2008

Language:

english

File:

PDF, 359 KB

english, 2008

36

Effects of temperature and size on contact behavior of self-assembled alkanethiol cluster for dip-pen nanolithography

Te-Hua Fang, Win-Jin Chang, Cheng-Da Wu

Journal:

Microelectronic Engineering

Year:

2008

Language:

english

File:

PDF, 1.11 MB

english, 2008

37

Thermal annealing effect on electrical properties of metal nitride gate electrodes with hafnium oxide gate dielectrics in nano-metric MOS devices

S. Chatterjee, Y. Kuo, J. Lu

Journal:

Microelectronic Engineering

Year:

2008

Language:

english

File:

PDF, 631 KB

english, 2008

38

Growth and structural properties of crystalline LaAlO3 on Si (0 0 1)

J.W. Reiner, A. Posadas, M. Wang, T.P. Ma, C.H. Ahn

Journal:

Microelectronic Engineering

Year:

2008

Language:

english

File:

PDF, 243 KB

english, 2008

39

Preface

Hsing-Huang Tseng, Byoung Hun Lee

Journal:

Microelectronic Engineering

Year:

2008

Language:

english

File:

PDF, 50 KB

english, 2008

40

Inside Front Cover - Editorial Board

Journal:

Microelectronic Engineering

Year:

2008

Language:

english

File:

PDF, 32 KB

english, 2008

41

High-quality high-k HfON formed with plasma jet assisted PVD process and application as tunnel dielectric for flash memories

Yanxiang Liu, Sun Il Shim, X.W. Wang, Lurng-Shehng Lee, Ming-Jinn Tsai, T.P. Ma

Journal:

Microelectronic Engineering

Year:

2008

Language:

english

File:

PDF, 649 KB

english, 2008

42

Breakdown characteristics of nFETs in inversion with metal/HfO2 gate stacks

N.A. Chowdhury, G. Bersuker, C. Young, R. Choi, S. Krishnan, D. Misra

Journal:

Microelectronic Engineering

Year:

2008

Language:

english

File:

PDF, 338 KB

english, 2008

43

Electronic defects in LaAlO3

K. Xiong, J. Robertson, S.J. Clark

Journal:

Microelectronic Engineering

Year:

2008

Language:

english

File:

PDF, 386 KB

english, 2008