A robust k ∼ 2.3 SiCOH low-k film formed...

Microelectronic Engineering 2007 Vol. 84; Iss. 11

A robust k ∼ 2.3 SiCOH low-k film formed by porogen removal with UV-cure

Nathan Kemeling, Kiyohiro Matsushita, Naoto Tsuji, Ken-ichi Kagami, Manabu Kato, Shinya Kaneko, Hessel Sprey, David de Roest, Nobuyoshi Kobayashi
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Volume:
84
Year:
2007
Language:
english
Pages:
7
DOI:
10.1016/j.mee.2007.05.025
File:
PDF, 310 KB
english, 2007
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