Electrical study of sulfur passivated In0.53Ga0.47As MOS...

Microelectronic Engineering 2009 Vol. 86; Iss. 7-9

Electrical study of sulfur passivated In0.53Ga0.47As MOS capacitor and transistor with ALD Al2O3 as gate insulator

Han-Chung Lin, Wei-E. Wang, Guy Brammertz, Marc Meuris, Marc Heyns
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Volume:
86
Year:
2009
Language:
english
Pages:
4
DOI:
10.1016/j.mee.2009.03.112
File:
PDF, 640 KB
english, 2009
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