TRAP BEHAVIOR IN AlGaN/GaN HEMTs BY POST-GATE-ANNEALING

International Journal of High Speed Electronics and Systems 2004 / 09 Vol. 14; Iss. 3

TRAP BEHAVIOR IN AlGaN/GaN HEMTs BY POST-GATE-ANNEALING

KIM, HYEONGNAM, LEE, JAESUN, LU, WU
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Volume:
14
Language:
english
Journal:
International Journal of High Speed Electronics and Systems
DOI:
10.1142/S0129156404002818
Date:
September, 2004
File:
PDF, 304 KB
english, 2004
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