A single layer hydrogen silsesquioxane (HSQ) based lift-off...

Microelectronic Engineering 2010 Vol. 87; Iss. 10

A single layer hydrogen silsesquioxane (HSQ) based lift-off process for germanium and platinum

Vikram Passi, Aurelie Lecestre, Christophe Krzeminski, Guilhem Larrieu, Emmanuel Dubois, Jean-Pierre Raskin
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Volume:
87
Year:
2010
Language:
english
Pages:
7
DOI:
10.1016/j.mee.2009.11.022
File:
PDF, 1.74 MB
english, 2010
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