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Simulation study of the 20 nm gate-length Ge implant-free quantum well p-MOSFET
K.H. Chan, B. Benbakhti, C. Riddet, J.R. Watling, A. AsenovVolume:
88
Year:
2011
Language:
english
Pages:
4
DOI:
10.1016/j.mee.2010.09.025
File:
PDF, 630 KB
english, 2011