Damages of Ge devices by 2-MeV electrons and their recovery
H. Ohyama, K. Sakamoto, H. Sukizaki, K. Takakura, M. Tsukamoto, K. Matsuo, I. Tsunoda, I. Kato, T. Nakashima, E. Simoen, B. De Jaeger, C. ClaeysVolume:
88
Year:
2011
Language:
english
Pages:
4
DOI:
10.1016/j.mee.2010.10.020
File:
PDF, 386 KB
english, 2011