![](/img/cover-not-exists.png)
Characterization of GeSn materials for future Ge pMOSFETs source/drain stressors
B. Vincent, Y. Shimura, S. Takeuchi, T. Nishimura, G. Eneman, A. Firrincieli, J. Demeulemeester, A. Vantomme, T. Clarysse, O. Nakatsuka, S. Zaima, J. Dekoster, M. Caymax, R. LooVolume:
88
Year:
2011
Language:
english
Pages:
5
DOI:
10.1016/j.mee.2010.10.025
File:
PDF, 1.09 MB
english, 2011