Numerical simulation of III–V FET architectures for high...

Microelectronic Engineering 2011 Vol. 88; Iss. 4

Numerical simulation of III–V FET architectures for high frequency and low consumption applications

Ming Shi, Jérôme Saint-Martin, Arnaud Bournel, Philippe Dollfus
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Volume:
88
Year:
2011
Language:
english
Pages:
4
DOI:
10.1016/j.mee.2010.10.026
File:
PDF, 1.03 MB
english, 2011
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