High performance n+/p and p+/n germanium diodes at...

Microelectronic Engineering 2011 Vol. 88; Iss. 3

High performance n+/p and p+/n germanium diodes at low-temperature activation annealing

V. Ioannou-Sougleridis, S.F. Galata, E. Golias, T. Speliotis, A. Dimoulas, D. Giubertoni, S. Gennaro, M. Barozzi
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Volume:
88
Year:
2011
Language:
english
Pages:
8
DOI:
10.1016/j.mee.2010.11.001
File:
PDF, 1.56 MB
english, 2011
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