Evaluation of electron irradiated embedded SiGe...

Microelectronic Engineering 2011 Vol. 88; Iss. 4

Evaluation of electron irradiated embedded SiGe source/drain diodes by Raman spectroscopy

H. Ohyama, N. Naka, K. Takakura, I. Tsunoda, M.B. Gonzalez, E. Simoen, C. Claeys
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Volume:
88
Year:
2011
Language:
english
Pages:
4
DOI:
10.1016/j.mee.2010.11.006
File:
PDF, 382 KB
english, 2011
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