Al2O3 stacks on In0.53Ga0.47As substrates: In situ...

Microelectronic Engineering 2011 Vol. 88; Iss. 4

Al2O3 stacks on In0.53Ga0.47As substrates: In situ investigation of the interface

M. Fusi, L. Lamagna, S. Spiga, M. Fanciulli, G. Brammertz, C. Merckling, M. Meuris, A. Molle
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Volume:
88
Year:
2011
Language:
english
Pages:
5
DOI:
10.1016/j.mee.2010.11.015
File:
PDF, 775 KB
english, 2011
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