Study of GaAsBi MOVPE growth on (1 0 0)...

Microelectronic Engineering 2011 Vol. 88; Iss. 4

Study of GaAsBi MOVPE growth on (1 0 0) GaAs substrate under high Bi flow rate by high resolution X-ray diffraction

H. Fitouri, I. Moussa, A. Rebey, B. El Jani
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Volume:
88
Year:
2011
Language:
english
Pages:
4
DOI:
10.1016/j.mee.2010.11.016
File:
PDF, 483 KB
english, 2011
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