Effects of increased compressive strain on hole effective...

Microelectronic Engineering 2011 Vol. 88; Iss. 4

Effects of increased compressive strain on hole effective mass and scattering mechanisms in strained Ge channels

K. Sawano, K. Toyama, R. Masutomi, T. Okamoto, K. Arimoto, K. Nakagawa, N. Usami, Y. Shiraki
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Volume:
88
Year:
2011
Language:
english
Pages:
4
DOI:
10.1016/j.mee.2010.11.018
File:
PDF, 502 KB
english, 2011
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