![](/img/cover-not-exists.png)
Role of carrier depletion effects and material properties in advanced microscale thermal modeling of N-GaInP–Si/p-GaAs–C heterojunction bipolar transistor (HBT) devices
Satbir S MadraVolume:
44
Year:
2004
Language:
english
Pages:
8
DOI:
10.1016/j.microrel.2004.03.012
File:
PDF, 833 KB
english, 2004