Analysis of ESD failure mechanism in 65nm bulk CMOS ESD...

Microelectronics Reliability 2006 Vol. 46; Iss. 9-11

Analysis of ESD failure mechanism in 65nm bulk CMOS ESD NMOSFETs with ESD implant

D. Alvarez, M.J. Abou-Khalil, C. Russ, K. Chatty, R. Gauthier, D. Kontos, J. Li, C. Seguin, R. Halbach
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Volume:
46
Year:
2006
Language:
english
Pages:
6
DOI:
10.1016/j.microrel.2006.07.041
File:
PDF, 2.21 MB
english, 2006
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