AlGaN/GaN HEMT Reliability Assessment by means of Low...

Microelectronics Reliability 2006 Vol. 46; Iss. 9-11

AlGaN/GaN HEMT Reliability Assessment by means of Low Frequency Noise Measurements

A. Sozza, A. Curutchet, C. Dua, N. Malbert, N. Labat, A. Touboul
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Volume:
46
Year:
2006
Language:
english
Pages:
6
DOI:
10.1016/j.microrel.2006.07.062
File:
PDF, 759 KB
english, 2006
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