Simulation of electrical characteristics of InP...

Microelectronics Reliability 2010 Vol. 50; Iss. 1

Simulation of electrical characteristics of InP double-heterojunction bipolar transistors with InGaAsSb base

Yang-Hua Chang, Rong-Hao Syu
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Volume:
50
Year:
2010
Language:
english
Pages:
5
DOI:
10.1016/j.microrel.2009.08.009
File:
PDF, 236 KB
english, 2010
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