Characterization of program and erase properties using...

Materials Science and Engineering: B 2005 Vol. 124-125; Iss. none

Characterization of program and erase properties using Fowler–Nordheim tunneling in the 30 nm silicon–oxide–nitride–oxide–silicon transistor

Hochan Ham, Jinhee Heo, Chungwoo Kim, Ilsub Chung
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Volume:
124-125
Year:
2005
Language:
english
Pages:
4
DOI:
10.1016/j.mseb.2005.08.118
File:
PDF, 207 KB
english, 2005
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