Advances in surfactant-mediated growth of germanium on...

Materials Science in Semiconductor Processing 2005 Vol. 8; Iss. 1-3

Advances in surfactant-mediated growth of germanium on silicon: high-quality p-type Ge films on Si

Tobias F. Wietler, André Ott, Eberhard Bugiel, Karl R. Hofmann
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Volume:
8
Year:
2005
Language:
english
Pages:
5
DOI:
10.1016/j.mssp.2004.09.077
File:
PDF, 266 KB
english, 2005
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