3C-SiC MOSFET with High Channel Mobility and CVD Gate Oxide

Materials Science Forum 2011 / 3 Vol. 679-680

3C-SiC MOSFET with High Channel Mobility and CVD Gate Oxide

Kobayashi, Motoki, Uchida, Hidetsugu, Minami, Akiyuki, Sakata, Toyokazu, Esteve, Romain, Schöner, Adolf
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Volume:
679-680
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.679-680.645
Date:
March, 2011
File:
PDF, 1.78 MB
english, 2011
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