Erbium Doping to P-Based III-V Semiconductors by OMVPE with...

Materials Science Forum 1995 Vol. 196-201

Erbium Doping to P-Based III-V Semiconductors by OMVPE with TBP as a Non-Toxic P Source

Fujiwara, Y., Ito, Yoshiaki, Nonogaki, Y., Matsubara, N., Fujita, K., Takeda, Yoshikazu
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Volume:
196-201
Year:
1995
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.196-201.621
File:
PDF, 497 KB
1995
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