Volume 196-201

Materials Science Forum

Volume 196-201

1

Effect of Donor Nature on Behavior of Photoluminescence of the Gallium Vacancy - Shallow Donor Complexes in n-Type GaAs under Uniaxial Pressure

Gutkin, A.A., Averkiev, N.S., Reshchikov, M.A., Sedov, V.E.

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 346 KB

1995

2

Structure of the 0.95 eV Photoluminescence Centers in n-Type GaAs

Reshchikov, M.A., Gutkin, A.A., Sedov, V.E.

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 315 KB

1995

3

Positron-Annihilation 2D-Acar Study of Divacancy and Vacancy-Oxygen Pairs in Si

Hasegawa, Masuyuki, Chiba, Toshinobu, Kawasuso, Atsuo, Akahane, Takashi, Suezawa, Masashi, Yamaguchi, Sadae, Sumino, Koji

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 679 KB

1995

4

Photoluminescence Due To Oxygen Precipitates Distinguished from the D Lines in Annealed Si

Tajima, Michio, Tokita, Masao, Warashina, M.

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 468 KB

1995

5

Acceptor-Hydrogen Complexes in InAs

Forkel-Wirth, Doris, Achtziger, N., Burchard, A., Correia, J.C., Deicher, Manfred, Grillenberger, Joachim, Gottschalck, H., Licht, T., Magerle, R., Reislöhner, U., Rüb, M., Toulemonde, M., Witthuhn, W

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 342 KB

1995

6

TEM Evaluation of Ordered and Modulated Structures in MBE-Grown InAlAs Crystals on (110)InP

Ueda, O., Nakata, Y., Muto, S.

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 433 KB

1995

7

Doping Puzzles in II-VI and III-V Semiconductors

Chadi, D.J., Park, C.H.

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 560 KB

1995

8

H Interacting with Intrinsic Defects in Si

Bech Nielsen, B., Hoffmann, L., Budde, M., Jones, R., Goss, J.P., Öberg, Sven

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 406 KB

1995

9

Damages in AlGaAs/GaAs Heterostructures Induced by KeV-Electron-Beam Irradiation

Wada, Toshimi, Kanayama, Toshihiko, Tada, Tetsuya, Wang, Xue Lun, Sugiyama, Yoshinobu, Komuro, Masanori

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 336 KB

1995

10

Optical Absorption due to Vibration of Hydrogen-Oxygen Pairs in Silicon

Markevich, V.P., Suezawa, Masashi, Sumino, Koji

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 300 KB

1995

11

Lifetime Identification of Thermal Oxidation Process Induced Contamination in Silicon Wafers

Daio, H., Yakushiji, K., Buczkowski, A., Shimura, F.

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 326 KB

1995

12

Subsurface Damage in Single Diamond Tool Machined SI Wafers

Mchedlidze, Teimuraz, Yonenaga, I., Sumino, Koji

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 464 KB

1995

13

A Correlation between Compositional Fluctuations and Surface Undulations in Strained Layer Epitaxy

Walther, T., Humphreys, Colin J., Cullis, A.G., Robbins, D.J.

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 467 KB

1995

14

The Effective Mass Donor in Galliumnitride

Alt, H.C., Meyer, B.K., Volm, D., Graber, A., Drechsler, M., Hofmann, D.M., Detchprohm, T., Amano, A., Akasaki, Isamu

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 339 KB

1995

15

Negative Effective-U and positive Effective-U Nature of the Bistable Dangling-Bonds in a-Si, a-Si:H and c-Si Studied by ab Initio Molecular-Dynamics Simulation

Orita, Nozomi, Matsunaga, Takuya, Katayama-Yoshida, Hiroshi

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 312 KB

1995

16

Carrier Concentrations Saturation in n Type AlxGa1-xAs

Du, A.Y., Li, Ming Fu, Chong, T.C., Chua, S.J.

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 336 KB

1995

17

Photoluminescence of Ring-Distribution of Oxygen Precipitates in Czochralski Silicon

Terashima, K., Ikarashi, T., Ono, Haruhiko, Tajima, Michio

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 371 KB

1995

18

Microdefects in Nitrogen Doped FZ Silicon Revealed by Li+ Drifting

Knowlton, W.B., Walton, J.T., Lee, J.S., Wong, Y.K., Haller, Eugene E., von Ammon, Wilfried, Zulehner, W.

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 418 KB

1995

19

Donor Metastable States and the Polaron Effect in n-Type Gallium Arsenide

Barmby, P.W., Dunn, Janette L., Bates, Colin A., Klaassen, T.O., Van Der Sluijs, A.J.

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 375 KB

1995

20

Identification of Phonon Scattering Resonances with Defects in Gallium Arsenide

Maier, F., Eilenberger, R., Beck, Werner, Lassmann, K.

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 376 KB

1995

21

The Titanium and Vanadium Donor in CdTe

Christmann, P., Kreissl, J., Hofmann, D., Meyer, B.K., Schwarz, R., Benz, K.W.

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 348 KB

1995

22

Estimation of Rare-Earth Energy Levels in the Bandgap of Semiconductors

Taguchi, Akihito, Takahei, Kenichiro

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 381 KB

1995

23

Erbium Doping to P-Based III-V Semiconductors by OMVPE with TBP as a Non-Toxic P Source

Fujiwara, Y., Ito, Yoshiaki, Nonogaki, Y., Matsubara, N., Fujita, K., Takeda, Yoshikazu

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 497 KB

1995

24

Relationship between Grown-In Defects and Thermal History during CZ Si Crystal Growth

Takano, K., Kitagawa, Kazuo, Lino, E., Kimura, M., Yamagishi, H.

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 396 KB

1995

25

An Electron Paramagnetic Resonance Study of Defects in Semiconducting Iron Disilicide

Irmscher, K., Gehlhoff, W., Tomm, Y., Lange, H.

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 419 KB

1995

26

A Bistable Defect in Si-Doped Al0.3Ga0.7As

Sobolev, M.M., Kochnev, I.V., Papentsev, M.I., Kalinovsky, V.S.

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 346 KB

1995

27

Enhanced Diffusion of Impurities into Solids by Electron Beam Doping

Wada, Takao, Fujimoto, Hiroshi, Masuda, Haruho

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 357 KB

1995

28

Fundamentals of Point Defect Aggregation and Dissolution Phenomena of Crystal Originated Defects in Czochralski Silicon

Wijaranakula, W.

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 383 KB

1995

29

Adsorption of Antimony on Si(113) Surfaces: Ab-Initio Calculations and STM Investigations

Dąbrowski, Jaroslaw, Müssig, Hans Joachim, Wolff, G., Arabczyk, Waleran, Hinrich, S.

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 509 KB

1995

30

The Atomic Stucture of Mn4 Clusters in Silicon

Overhof, Harald

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 386 KB

1995

31

Positron Lifetime in Si Multivacancies

Saito, Mineo, Oshiyama, Atsushi

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 405 KB

1995

32

Spin-Dependent Transport in SiC and III-V Semiconductor Devices

Reinacher, N.M., Brandt, M.S., Stutzmann, M.

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 552 KB

1995

33

Study of Defect Behavior in Ion-Implanted Si Wafers by Slow Positron Annihilation Spectroscopy

Fujinami, Masanori, Hayashi, S.

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 405 KB

1995

34

Ga Bound Excitons in 6H-SiC

Henry, Anne, Hallin, Christer, Ivanov, I.G., Bergman, J. Peder, Kordina, Olle, Monemar, Bo, Janzén, Erik

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 365 KB

1995

35

Hydrogen Induced Degradation in Heavily Carbon-Doped GaAs Diodes

Fushimi, Hiroshi, Wada, Keiji

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 440 KB

1995

36

The Importance of Auger Effect on the Efficiency of Er-Related Luminescence in InP:Er

Wang, X.Z., Wessels, Bruce W.

Journal:

Materials Science Forum

Year:

1995

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PDF, 325 KB

1995

37

Chemical Identification on the Atomic Scale in MBE-Grown III-V Alloy Semiconductors

Koenraad, Paul M., Johnson, M.B., Pfister, M., Salemink, H.W.M.

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 809 KB

1995

38

Calculation of Local Vibrational Modes at Point Defects in Semiconductors

Scherz, Udo, Schrepel, Christoph

Journal:

Materials Science Forum

Year:

1995

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PDF, 392 KB

1995

39

A Hydrogen-Related Defect in Polycrystalline CVD Diamond

Zhou, X., Watkins, G.D., McNamara Rutledge, K.M.

Journal:

Materials Science Forum

Year:

1995

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PDF, 414 KB

1995

40

Magneto-Optical and EPR Investigation of Ionized DX Centers in Te-Doped AlxGa1-xAs

Pinheiro, M.V.B., Linde, Matthias, Ohkura, Hiroshi, Spaeth, Johann Martin

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 347 KB

1995

41

Athermal Motion of Donors under Ultrasound in CdS Crystals

Sheinkman, Moissei K., Borkovskaya, L.V., Dzhymaev, B.R., Drozdova, I.A., Korsunskaya, Nadejda E., Markevich, I.V., Singaevsky, A.F.

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 266 KB

1995

42

Electrical Detection of Electron Paramagnetic Resonance: Studies of the Mechanism of the Spin-Dependent Recombination Process

Greulich-Weber, S., Stich, B., Spaeth, Johann Martin

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 473 KB

1995

43

Local Structure of the DX Center in AlGaAs: Results from Positron Spectroscopy

Laine, T., Mäkinen, J., Saarinen, Kimmo, Hautojärvi, Pekka J., Corbel, C., Gibart, Pierre

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 392 KB

1995

44

Electrically Active Centers in Silicon Doped with Erbium

Emtsev, Valentin V., Alexandrov, O.V., Poloskin, D.S., Shek, E.I., Sobolev, N.A.

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 391 KB

1995

45

Pressure-Induced Increase of the Intra-4f Luminescence of GaAs:Er,O at Room Temperature

Takarabe, K., Mizushima, T., Minomura, S., Taguchi, Akihito, Takahei, Kenichiro

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 287 KB

1995

46

Optical and Electrical Characterisation of He Plasma Sputtered n-GaAs

Murtagh, M., Hildebrandt, S., Herbert, P.A.F., O'Connor, G.M., Crean, G.M.

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 370 KB

1995

47

Erbium Related Centers in CZ-Silicon

Jantsch, W., Przybylinska, Hanka, Suprun-Belevich, Yu., Stepikhova, M., Hendorfer, G., Palmetshofer, L.

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 419 KB

1995

48

The Origin of the Low-Spin Ground State for Trigonal Fei-AuSi and Fei-AgSi Pairs in Silicon

Overhof, Harald, Weihrich, H.

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 404 KB

1995

49

Acceptor-Hydrogen Interaction in Ternary III-V Semiconductors

Burchard, A., Deicher, Manfred, Forkel-Wirth, Doris, Freidinger, J., Kerle, T., Magerle, R., Pfeiffer, Wulf, Prost, W., Wellmann, Peter J., Winnacker, Albrecht

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 371 KB

1995

50

Novel Very Slow Photoluminescence Processes at Transition Metal Ions in III-V Semiconductors

Thonke, Klaus, Baier, T., Hamann, Joe, Scheerer, O., Sauer, R., Ulrici, W.

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 391 KB

1995

51

Influence of Dislocations on the Transport Properties of Two Dimensional Electron Gas in the Quantum Regim

Farvacque, J.-L., Bougrioua, Z., Ferré, D.

Journal:

Materials Science Forum

Year:

1995

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PDF, 407 KB

1995

52

Shallow and Deep Centers in Heavily Doped Silicon Quantum Wells

Gehlhoff, W., Bagraev, N.T., Klyachkin, L.E.

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 442 KB

1995

53

Thermal and Athermal Migration of Ion-Irradiation Defects in Al0.3Ga0.7As/GaAs Heterostructures

Kanayama, Toshihiko, Wada, Toshimi, Sugiyama, Yoshinobu

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 333 KB

1995

54

Non-Radiative Recombination in Irradiated GaAs/AlGaAs Multiple Quantum Wells

Bergman, J. Peder, Holtz, P.O., Monemar, Bo, Lindström, L., Sundaram, M., Gossard, A.C., Merz, J.L.

Journal:

Materials Science Forum

Year:

1995

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PDF, 383 KB

1995

55

Defect Control and Defect Engineering in Ion-Implanted Diamond

Journal:

Materials Science Forum

Year:

1995

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PDF, 450 KB

1995

56

Ga-Vacancies and AsGa-Antisites in Electron Irradiated GaAs

Hausmann, H., Ehrhart, Peter

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 412 KB

1995

57

Reactivation Kinetics of Lithium-Passivated Acceptors inGaAs

Leosson, K., Yang, B.H., Gislason, H.P.

Journal:

Materials Science Forum

Year:

1995

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PDF, 373 KB

1995

58

Effect of Transition Metal Impurities on the Photoluminescence of Deformed Si Crystal

Okuyama, Tomohito, Suezawa, Masashi, Yonenaga, I., Sumino, Koji

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 353 KB

1995

59

Study of The Compensating Centres in GaAs:Te by Positron Annihilation

Krause-Rehberg, R., Dlubek, G., Polity, A.

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 405 KB

1995

60

Secondary Defects and Deep Levels in N-Si Induced by High Energy P Ion Implantation

Tatsukawa, S., Nakahara, Yuko, Matsumoto, Satoshi

Journal:

Materials Science Forum

Year:

1995

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PDF, 308 KB

1995

61

Defect Related Recombination Processes in II-VI Quantum Wells

Godlewski, M., Bergman, J. Peder, Monemar, Bo, Koziarska, B., Suchocki, A., Karczewski, G., Wojtowicz, T., Kossut, Jacek, Waag, A., Hommel, D.

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 418 KB

1995

62

New Experimental Methods of Detection the Paramagnetic Recombination Centers in Silicon P-N Junctions and Diodes

Vlasenko, L.S., Vlasenko, M.P.

Journal:

Materials Science Forum

Year:

1995

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PDF, 395 KB

1995

63

ODMR Investigation of Near-Surface Damage Induced by Dry-Etching Process Using GaAs/AlAs Quantum Well Structures

Mochizuki, Yasunori, Mizuta, M., Mochizuki, A.

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 424 KB

1995

64

Interstitial Hydrogen and the Dissociation of C-H Defects in GaAs

Breuer, S.J., Jones, R., Öberg, Sven, Briddon, Patrick R.

Journal:

Materials Science Forum

Year:

1995

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PDF, 443 KB

1995

65

Impurity-Defect Complexes in Neutron Transmutation Doped Gallium Arsenide and Germanium Crystals

Bykovsky, V.A., Dolgikh, N.I., Emtsev, Valentin V., Haller, Eugene E., Hitko, V.I., Karpovich, L.M., Shoh, V.F., Utenko, V.I.

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 395 KB

1995

66

The NNO Defect in Silicon

Berg Rasmussen, F., Öberg, Sven, Jones, R., Ewels, C.P., Goss, J.P., Miró, J., Deák, Peter

Journal:

Materials Science Forum

Year:

1995

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PDF, 385 KB

1995

67

Enhanced Impurity Solubility and Diffusion Near Surfaces

Journal:

Materials Science Forum

Year:

1995

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PDF, 139 KB

1995

68

Paramagnetic Resonance of the Neutral Maganese Acceptor in GaP

Kreissl, J., Ulrici, W., El-Metoui, M., Vasson, A.M., Gavaix, A.

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 380 KB

1995

69

Impurity Centers Associated with Magnesium Introduced in Silicon by Fast Neutron Transmutation Reactions

Emtsev, Valentin V., Poloskin, D.S., Shek, E.I., Sobolev, N.A.

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 290 KB

1995

70

Reactivation of Si Donors and Zn Acceptors in Plasma-Irradiated GaAs by Reverse Bias Annealing

Wada, Keiji, Nakanishi, Hachiro, Kimerling, Lionel C.

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 365 KB

1995

71

Time-of-Flight in Lithium-Compensated GaAS

Ingvarsson, S.Þ., Gislason, H.P.

Journal:

Materials Science Forum

Year:

1995

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PDF, 382 KB

1995

72

Frenkel Pairs and PIn Antisites in Low Temperature Electron Irradiated InP

Hausmann, H., Ehrhart, Peter

Journal:

Materials Science Forum

Year:

1995

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PDF, 379 KB

1995

73

Multiphonon Carrier Emission and Capture by Defects in Nanostructures

Yassievich, I.N., Pakhomov, A.A.

Journal:

Materials Science Forum

Year:

1995

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PDF, 326 KB

1995

74

Photoluminescence Study on Point Defects in SIMOX Buried SiO2 Film

Seol, K.S., Ieki, A., Ohki, Y., Nishikawa, Hironobu, Tachimori, M.

Journal:

Materials Science Forum

Year:

1995

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PDF, 355 KB

1995

75

Lattice Defects in High Quality As-Grown CZ Silicon, Studied with Ligth Scattering and Preferential Etching Techniques

Vanhellemont, Jan, Kissinger, G., Gräf, D., Kenis, Karine, Depas, M., Mertens, Paul W., Lambert, U., Heyns, Marc M., Claeys, C., Richter, Hans, Wagner, P.

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 381 KB

1995

76

A Positron Lifetime Study of Defects in Plastically Deformed Silicon

Kawasuso, Atsuo, Suezawa, Masashi, Hasegawa, Mitsuru, Yamaguchi, S., Sumino, Koji

Journal:

Materials Science Forum

Year:

1995

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PDF, 428 KB

1995

77

Category II and Category III Defects in 200 KEV Fe Implanted InP

Journal:

Materials Science Forum

Year:

1995

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PDF, 581 KB

1995

78

Increase of Electrical Activity of Dislocations in Si during Plastic Deformation

Kononchuk, O.V., Orlov, V., Feklisova, O.V., Yakimov, E.B., Yarykin, Nikolai

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 470 KB

1995

79

Si/Ge Ordered Interface: Structure and Formation Mechanism

Ikarashi, N., Akimoto, Katsuhiro, Oshiyama, Atsushi, Tatsumi, Tetsuo

Journal:

Materials Science Forum

Year:

1995

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PDF, 493 KB

1995

80

Scanning Tunneling Spectroscopic Studies of GaAs Doped with Si

Karpierz, K., Suezawa, Masashi, Wawro, A., Nishina, Y.

Journal:

Materials Science Forum

Year:

1995

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PDF, 367 KB

1995

81

Ab Initio Study on Fe-Acceptor Pairing in Silicon

Sugimoto, Masaki, Seki, A.

Journal:

Materials Science Forum

Year:

1995

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PDF, 379 KB

1995

82

DLTS of Polysilicon Emitter Solar Cells

Parton, D.P., Markvart, Tomas, Ashburn, Peter, Carter, J.C., Castañer, L.

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 351 KB

1995

83

Excitons Bound to Isoelectronic C3V-Defects B480 (1.1068 eV) in Silicon

Kaminskii, A.S., Lavrov, E.V.

Journal:

Materials Science Forum

Year:

1995

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PDF, 308 KB

1995

84

In Situ Phosphorus Doping of Si and Si1-xGex Epitaxial Layers by RTP/VLP-CVD

Huang, Xiao Dong, Han, Ping, Shi, Yi, Zheng, You Dou, Hu, Li Qun, Wang, Rong Hua, Zhu, Shun Ming

Journal:

Materials Science Forum

Year:

1995

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PDF, 230 KB

1995

85

Time-Resolved ODMR Measurements on the 'Yellow Luminescence' in MOCVD-Grown GaN Films

Koschnick, F.K., Spaeth, Johann Martin, Glaser, E.R., Doverspike, K., Rowland, L.B., Gaskill, D. Kurt, Wickenden, D.K.

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 413 KB

1995

86

On the Behaviour of the Divacancy in Silicon during Anneals between 200 and 350°C.

Trauwaert, M.-A., Vanhellemont, Jan, Maes, H.E., Van Bavel, A.-M., Langouche, G., Stesmans, Andre, Clauws, Paul

Journal:

Materials Science Forum

Year:

1995

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PDF, 390 KB

1995

87

Electron Paramagnetic Resonance of Phosphorus, Platinum, and Iron in Float Zone Si1-x Gex Crystals

Höhne, M., Juda, U., Wollweber, Jürgen, Schulz, D., Donecker, J., Gerhardt, A.

Journal:

Materials Science Forum

Year:

1995

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PDF, 313 KB

1995

88

Theory of Interstitial Oxygen in Silicon and Germanium

Artacho, E., Yndurain, F.

Journal:

Materials Science Forum

Year:

1995

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PDF, 383 KB

1995

89

Defects in NTD MCZ Si Doped with Magnesium

Tkacheva, T.M., Petrov, G.N., Shabalin, E.P., Golubev, V.G., Kropotov, G.I., Shek, E.I., Sobolev, N.A.

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 428 KB

1995

90

Acceptor and Donor Neutralization by Hydrogen in Bulk 6H-SiC

Clerjaud, B., Gendron, F., Porte, C., Wilkening, W.

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 378 KB

1995

91

Electrical and Defect Characterization of Sputter Deposited Au and Cr Schottky Barrier Diodes on GaAs

Goodman, S.A., Auret, F.D., Leclerc, Y.

Journal:

Materials Science Forum

Year:

1995

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PDF, 411 KB

1995

92

Doping of ZnSe, ZnTe, and CdTe with Group V Elements

Wolf, Herbert, Burchard, A., Deicher, Manfred, Filz, T., Jost, A., Lauer, St., Magerle, R., Ostheimer, V., Pfeiffer, Wulf, Wichert, Th.

Journal:

Materials Science Forum

Year:

1995

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PDF, 377 KB

1995

93

High Resolution DLTS Studies of Transition-Metal-Related Defects in Silicon

Dobaczewski, L., Kamiński, P., Kozłowski, R., Surma, M.

Journal:

Materials Science Forum

Year:

1995

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PDF, 510 KB

1995

94

High Energy Si, Zn and Ga Ion Implantation into GaAs on Si

Tamura, M., Saitoh, T.

Journal:

Materials Science Forum

Year:

1995

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PDF, 642 KB

1995

95

Total Energy Calculation for Er Impurity in GaAs

Taguchi, Akihito, Ohno, Takahisa

Journal:

Materials Science Forum

Year:

1995

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PDF, 401 KB

1995

96

Unified Theory of Defects in Insulators

Journal:

Materials Science Forum

Year:

1995

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PDF, 571 KB

1995

97

Direct Bonding of Silicon Wafers with Grooved Surfaces: Characterization of Defects and Application to High Power Devices

Grekhov, Igor V., Argunova, T.S., Gutkin, Mikhail Yu., Kostina, L.S., Kudryavtzeva, T.V.

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 395 KB

1995

98

Bound Exciton Spectra in Semi-Insulating GaAs

Gislason, H.P., Yang, B.H.

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 426 KB

1995

99

Oxygen Complexing with Group II Impurities in Silicon

Daly, S.E., McGlynn, E., Henry, M.O., Campion, J.D., McGuigan, K.G., DoCarmo, M.C., Nazaré, Maria Helena

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 306 KB

1995

100

Dislocation Reduction of GaAs and AIGaAs on Si Substrate for High Efficiency Solar Cell

Soga, T., Yang, M, Kato, Tomohisa, Jimbo, Takashi, Umeno, Masayoshi

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 339 KB

1995

101

Oscillations in PLE Spectra of Li Passivated GaAs, Related to Interstitial Li Donors

Pétursson, J., Ingvarsson, S.Þ., Yang, B.H., Gislason, H.P.

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 388 KB

1995

102

Evidence for High Vacancy Concentrations in Heavily Doped N-Type Silicon from Mossbauer Experiments

Weyer, G., Fanciulli, M., Freitag, Kristian, Nylandsted-Larsen, Arne, Lindroos, M., Müller, E., Vestergaard, H.C.

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 378 KB

1995

103

TEM Investigation of Point Defect Interactions in II-VI Compounds

Loginov, Yuri Y., Brown, Paul D., Humphreys, Colin J.

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 699 KB

1995

104

Nature of D-Defect in CZ Silicon: D-Defect Dissolution and D-Defect Related T.D.D.B

Park, J.G., Jung, J.K., Cho, K.C., Rozgonyi, George A.

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 689 KB

1995

105

Iron and Nickel as Centers of Nonradiative Recombination in ZnS and ZnSe

Surma, M., Zakrzewski, A.J., Godlewski, M.

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 355 KB

1995

106

Spin Dependent Recombination and EPR of Surface Paramagnetic Centers in Crystalline and Porous Silicon

Laiho, R., Vlasenko, L.S., Vlasenko, M.P.

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 359 KB

1995

107

The H2* Defect in Crystalline Germanium

Budde, M., Bech Nielsen, B., Jones, R., Öberg, Sven, Goss, J.P.

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 389 KB

1995

108

SF6/02 and CF4/02 Reactive-Ion-Etching-Induced Defects in Silicon Studied by Photoluminescence Spectroscopy: Role of Oxygen

Buyanova, I.A., Henry, Anne, Monemar, Bo, Lindström, J. Lennart, Sheinkman, Moissei K., Oehrlein, G.S.

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 421 KB

1995

109

Optically Induced Anneal of GaAs and AlGaAs Layers

Abramov, A.V., Deryagin, N.G., Deryagin, A.G., Kuchinsciy, V.I., Sobolev, M.M., Papentsev, M.I.

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 296 KB

1995

110

Generation of Point Defects during Plastic Deformation of InP

Leipner, H.S., Krause-Rehberg, R., Hübner, Ch.

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 403 KB

1995

111

Boron Neutralization in Epitaxial Si Films Grown by Photo-CVD at Very Low Temperature (≦ 200°C)

Abe, Keiko, Oshima, T., Yamada, A., Konagai, Makoto

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 350 KB

1995

112

Ab Initio Calculation for G-Values of ESR Centers in a-Si:H

Katagiri, Hideki

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 373 KB

1995

113

Oscillator Strengths and Linewidths of Shallow Impurity Spectra in Si and Ge

Andreev, Boris A., Kozlov, E.B., Lifshits, T.M.

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 366 KB

1995

114

Lithium-Gold-Related Photoluminescence in n-Type Silicon

Gislason, H.P., Kristjánsson, S., Sveinbjörnsson, Einar Ö.

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 393 KB

1995

115

Ni Complexes in Diamond

Goss, J.P., Resende, A., Jones, R., Öberg, Sven, Briddon, Patrick R.

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 402 KB

1995

116

Acceptor Compensation in Nitrogen Doped Zinc Selenide

Song, C.D., Wu, Y.H., Suezawa, Masashi, Nishiyama, F., Katayama-Yoshida, Hiroshi, Yao, Takeshi

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 305 KB

1995

117

Determination of High Relative Deep Level Concentrations in DLTS

Kotereva, T.V., Kasatkin, A.P., Shmagin, V.

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 292 KB

1995

118

New Bistable Oxygen-Related Complex in Silicon

Abdullin, Kh.A., Mukashev, B.N., Gorelkinskii, Yu.V.

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 362 KB

1995

119

Hydrogen States and Passivation in Silicon

Mukashev, B.N., Tokmoldin, S.Z.

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 363 KB

1995

120

Optical Studies of Infrared Active Defects in Irradiated Si After Annealing at 450°C

Shi, Y., Suezawa, Masashi, Wu, Feng Mei, Imai, M., Zheng, Y.D., Sumino, Koji

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 406 KB

1995

121

Photoluminescence of Bulk Si-Ge Single Crystals

Honda, T., Suezawa, Masashi, Sumino, Koji

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 333 KB

1995

122

Novel Properties of Hydrogen-Containing Complexes Revealed by their Hydrogen Vibrations

Stavola, Michael, Zheng, J.-F., Cheng, Y.M., Abernathy, C.R., Pearton, S.J.

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 634 KB

1995

123

The Chemical Identification of Defect Impurities Using Radioactive Isotopes

Daly, S.E., Henry, M.O., Frehill, C.A., Freitag, Kristian, Vianden, R., Rohrlack, G., Forkel-Wirth, Doris

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 359 KB

1995

124

Interface Defects of Bonded Silicon Wafers

Reiche, M., Tong, Q.-Y., Gösele, U.M., Heydenreich, J.

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 635 KB

1995

125

Novel Technique for Reliable AlGaAs/GaAs Light Emitting Diodes on Si Using GaAs Islands Active Regions

Hasegawa, Y., Egawa, Takashi, Jimbo, Takashi, Umeno, Masayoshi

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 399 KB

1995

126

Trends in the Metastability of DX-Centers

Schmidt, T.M., Fazzio, A., Caldas, Marilia J.

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 313 KB

1995

127

Relation between Minute Lattice Strain and Anomalous Oxygen Precipitation in a Czochralski-Grown Silicon Crystal

Kimura, Shigeru, Ikarashi, Taeko, Tanikawa, Akio, Ishikawa, Tetsuya

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 516 KB

1995

128

Arsenic-Antisite-Related Defects in GaAs Grown at Low Temperature: Charaterization of Localized States

Landman, J.I., Morgan, C.G., Schick, J.T., Kumar, A., Papoulias, P., Kramer, M.F.

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 398 KB

1995

129

Intermdiately Bound Excitons in Wurtzit Type Semiconducturs Doped with Transition Metal Impurities

Dahan, P., Fleurov, V.B., Kikoin, K.A.

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 391 KB

1995

130

Investigation of Er-Related Centers in Doped GaP

Wang, X.Z., Wessels, Bruce W.

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 349 KB

1995

131

Hydrogen Passivation of the Sulfur Double Donor in Silicon Investigated by EPR and ENDOR

Zevenbergen, I.S., Gregorkiewicz, T., Ammerlaan, C.A.J.

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 391 KB

1995

132

The Influence of the Zinc Concentration on Defect Characteristics of InP

Mahony, J., Mascher, Peter

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 377 KB

1995

133

Irradiation Temperature Dependence of Residual Defects in 17MeV-Proton Bombarded Silicon

Amekura, H., Kishimoto, N., Kono, K., Saito, T.

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 368 KB

1995

134

Direct Experimental Evidence of Autolocalization Nature of DX-Centers

Ganichev, S.D., Yassievich, I.N., Prettl, W., Diener, J., Meyer, B.K., Benz, K.W.

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 409 KB

1995

135

ESR Study of a-Ge1-xNx Prepared by Magnetron Sputtering

Yokomichi, Haruo

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 348 KB

1995

136

Optical and Magnetic Resonance Studies of Defects in GaN

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 646 KB

1995

137

Irradiation Induced Lattice Defects in Si1-xGex Epitaxial Devices

Ohyama, H., Vanhellemont, Jan, Takami, Y., Hayama, K., Kudo, T., Hakata, T., Kobayashi, K., Sunaga, H., Poortmans, J., Caymax, Matty

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 383 KB

1995

138

Transmission Electron Microscopy of LatticeDefects in CZ-Silicon Wafer Formed by Two-Stage Annealing

Ishikawa, Shin, Matsushita, Mituyoshi, Shimomura, Jun-ichi

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 602 KB

1995

139

Electronic Structure of Erbium Centers in Silicon

Gan, F.X., Assali, Lucy V.C., Kimerling, Lionel C.

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 406 KB

1995

140

Hydrogen Passivation of Iron-Related Hole Traps in Silicon

Kouketsu, M., Watanabe, K., Isomae, Seiichi

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 314 KB

1995

141

Photoinduced Defects in CdS-Doped Glasses

Miyoshi, Tadaki, Towata, Ken-Ichi, Matsuki, Hirobumi, Matsuo, Naoto, Kaneda, Teruhisa

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 329 KB

1995

142

The Bending of Si Crystals as a Means to Determine the Orientation of Defects in Si

Van Bavel, A.-M., Degroote, S., Vantomme, A., Stesmans, Andre, Langouche, G.

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 390 KB

1995

143

Anharmonicity of The CAsLocal Oscillator in Gallium Arsenide

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 366 KB

1995

144

PAC-Investigations of the Donor-Defect Interaction in III-V Compound Semiconductors with the Probe 77Br(77Se)

Wehner, M., Friedsam, P., Vianden, R., Jahn, S.G., Forkel-Wirth, Doris

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 372 KB

1995

145

Erbium in Silicon: A Defect System for Optoelectronic Intergrated Ciricuits

Michel, Jürgen, Palm, J., Gan, F.X., Ren, F.Y.G., Zheng, B., Dunham, S.T., Kimerling, Lionel C.

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 398 KB

1995

146

Variation of 2DEG-Properties on Hetrointerface Caused by the Surface Defects Recharging

Kreshchuk, A.M., Kipshidze, G.D., Novikov, S.V., Savel'ev, I.G., Shik, A.Ya.

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 363 KB

1995

147

Infrared and Raman Studies of Si Delta-Doped (100) GaAs Grown by MBE at 400°C on c(4x4) Surfaces

Newman, R.C., Ashwin, M.J., Fahy, M.R., Hart, L., Holmes, S.N., Roberts, C., Wagner, J.

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 395 KB

1995

148

Extended Defect Formation in Silicon and Germanium Induced by Light Gas Ion Irradiation Studied with Transmission Electron Microscopy

Muto, Shunsuke, Takeda, Seiji, Hirata, Mitsuji

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 573 KB

1995

149

Defects in Porous Silicon: A Study with Optical and Spin Resonance Methodes

Hofmann, D.M., Meyer, B.K., Christmann, P., Wimbauer, T., Stadler, W., Nikolov, A., Scharmann, A., Hofstätter, A.

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 308 KB

1995

150

Use of Bistable Centers in CdF2 in Holographic Recording

Koziarska, B., Langer, Jerzy M., Ryskin, Alexandr I., Shcheulin, A.S., Suchocki, A.

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 435 KB

1995

151

Influence of Intrinsic Defects on the Electronic Structure of Non-Stoichiometric CuInS2 Chalcopyrite Semiconductors

Yamamoto, Tetsuya, Katayama-Yoshida, Hiroshi

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 345 KB

1995

152

Investigation of the Manganese-Hydrogen Complex in Inp

Clerjaud, B., Côte, D., Lebkiri, A., Mari, A.

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 380 KB

1995

153

Computer Simulation Study on Dislocation Motion in Semiconductors

Masuda-Jindo, Kinichi, Aoki, Masato, Horsfield, A.P., Pettifor, David

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 324 KB

1995

154

Optical and Electrical Properties of Si:Er Light-Emitting Structures

Sobolev, N.A., Alexandrov, O.V., Bresler, M.S., Gusev, O.B., Shek, E.I., Makovijchuk, M.I., Parshin, E.O.

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 373 KB

1995

155

Effect of Carbon on Thermal Double Donor Formation in Silicon

Murin, L.I., Markevich, V.P.

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 406 KB

1995

156

Gettering of Iron Using Electrically Inactive Boron Doped Layer

Tomita, Hiroshi, Saito, Mami, Yamabe, Kikuo

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 365 KB

1995

157

Correlated Charged Donors in GaAs/AlGaAs Quantum Well. Quantum- and Mobility-Scattering Times

Suski, T., Wiśniewski, P., Skierbiszewski, Czeslaw, Litwin-Staszewska, E., Brunthaler, G., Köhler, K.

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 401 KB

1995

158

Nickel and Nitrogen(?) Related Defects in High Pressure Synthetic Diamond

Nazaré, Maria Helena, Rino, L.M., Kanda, H.

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 335 KB

1995

159

Energy States of Deformation-Induced Dislocations in Silicon Crystals

Kusanagi, H., Sekiguchi, Takashi, Sumino, Koji

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 399 KB

1995

160

Theoretical Modelling of Donor Metastable States in n-Type Gallium Arsenide

Barmby, P.W., Dunn, Janette L., Bates, Colin A., Klaassen, T.O.

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 358 KB

1995

161

Contamination and Cleaning of GaAs-(100) Surfaces

Gutjahr, K., Reiche, M., Gösele, U.M.

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 327 KB

1995

162

Relaxation-Induced Deep Levels in SiGe/Si Heteroepitaxial Films

Mera, Yutaka, Maeda, Koji, Shiraki, Yasuhiro

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 410 KB

1995

163

Raman Image Study of Defects in Ion-Implanted and Post-Annealed Silicon

Mizoguchi, K., Nakashima, Shinichi, Harima, Hiroshi, Hara, Tohru

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 383 KB

1995

164

Magnetoelectronic States in Semiconductor / Antiferromagnet Superlattices

Wilamowski, Zbysław, Jantsch, W., Springholz, G., Faschinger, W.

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 452 KB

1995

165

Arsenic Antisite-Arsenic Vacancy Complex and Gallium Vacancy in GaAs: A Kind of Bistability Pair of Intrinsic Defects?

Wietzke, K.H., Koschnick, F.K., Spaeth, Johann Martin

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 408 KB

1995

166

Electron Paramagnetic Resonance and Optical Studies of Vanadium-Doped ZnTe

Kreissl, J., Irmscher, K., Peka, P., Lehr, M.U., Schulz, H.-J., Pohl, U.W.

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 378 KB

1995

167

A Theoretical Study of the B-H and Al-H Complexes in Si

Zhou, Y., Luchsinger, R., Meier, P.F.

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 350 KB

1995

168

Carbon Induced Inhomogeneous Strain Splitting of the Phosphorus Bound Exciton Line in Silicon

Safonov, A.N., Lightowlers, Edward C., Davies, Gordon

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 363 KB

1995

169

Characteristics of Er-Oxygen Complex Centers in GaAs

Takahei, Kenichiro, Horikoshi, Yoshiji, Taguchi, Akihito

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 419 KB

1995

170

Study of Electron Irradiation-Induced Defects of 3c-SiC and Diamond by Ultra-High Voltage Electron Microscopy

Oshima, Ryuichiro, Nie, Chou Y., Komatsu, Masao, Mori, Hirotaro

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 617 KB

1995

171

Characterization of Electron Traps in n-InP Induced by Hydrogen Plasma

Sakamoto, Yoshifumi, Sugino, Takashi, Matsuda, Koichiro, Shirafuji, Junji

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 410 KB

1995

172

Influence of Point Defect Concentration in Growing CZ-SI on the Formation Temperature of the Defects Affecting Gate Oxide Integrity

Iwasaki, T., Harada, Hiroshi, Haga, Hiroyo

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 458 KB

1995

173

EPR and IR Absorption of Defects in Isotopically Enriched Germanium

Khirunenko, L.I., Tripachko, N.A., Shakhovtsov, V.I., Yashnik, V.I., Shumov, V.V.

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 291 KB

1995

174

Studies of Defects in Electron and Proton Irradiated ZnO by Positron Annihilation

Puff, Werner, Brunner, S., Mascher, Peter, Balogh, Adam G.

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 404 KB

1995

175

Poole-Frenkel Ionization of Ge:Hg in Terahertz Electromagnetic Fields

Ganichev, S.D., Mayerhofer, B., Yassievich, I.N., Diener, J., Prettl, W.

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 339 KB

1995

176

Magneto-Optical and Odendor Investigations of the Substitutional Oxygen Defect in Galliumarsenide

Linde, Matthias, Alt, H.C., Spaeth, Johann Martin

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 394 KB

1995

177

Impurity Behavior during Si Single Crystal Growth from the Melt

Izumi, T., Morita, H., Fujiwara, T., Fujiwara, H., Inami, S.

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 344 KB

1995

178

Atomic-Scale Studies of Point Defects in Compound Semiconductors by Scannig Tunneling Microscopy

Gwo, S., Miwa, S., Ohno, H., Fan, Jun Fei, Tokumoto, H.

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 371 KB

1995

179

Effects of Si3N4 Films on Diffusion of Boron and Extended Defects in Silicon during Post-Implantation Annealing

Zaitsu, Y., Osada, K., Shimizu, T., Matsumoto, Satoshi, Yoshida, M., Arai, Eisuke, Abe, Takeji

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 313 KB

1995

180

Cathodoluminescence Study on Dislocation-Related Luminescence in Silicon

Sekiguchi, Takashi, Sumino, Koji

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 315 KB

1995

181

Metastable Photogenerated Effects in Low Resistivity GaAs

Machado, W.V.M., Landim, A.F.S., Amato, M.A., Ridley, B.K.

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 433 KB

1995

182

Relaxation of Yb 4f-Shell in In(P,As) Alloys

Kozanecki, A., Szczerbakow, A., Koziarska, B.

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 381 KB

1995

183

Local Structure Analysis around Arsenic Implanted into Silicon by XAFS Technique

Horii, Yoshimasa, Kase, Masataka, Komiya, Satoshi, Kikuchi, Yusuke

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 317 KB

1995

184

Zeeman Spectroscopy of Transition Metals in Hexagonal GaN

Heitz, R., Thurian, P., Loa, I., Eckey, L., Hoffmann, Andreas, Broser, I., Pressel, Klaus, Meyer, B.K., Mokhov, E.N.

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 412 KB

1995

185

Interstitials in Silicon Produced by Electron Beam Doping (Superdiffusion)

Wada, Takao, Hagino, Takashi, Fujimoto, Hiroshi, Masuda, Haruho

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 350 KB

1995

186

Peculiarities of Interstitial Carbon and Di-Carbon Defects in Si

Jones, R., Öberg, Sven, Leary, P., Torres, V.

Journal:

Materials Science Forum

Year:

1995

Language:

english

File:

PDF, 432 KB

english, 1995

187

Effect of Magnetic Field and Heat Treatment on the Grown-in Defects in MCZ Si Single Crystals

Tkacheva, T.M., Petrov, G.N., Datsenko, Leonid I.

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 366 KB

1995

188

Electron Paramagnetic Resonance of the Mn-Impurity in ZnS Nanocrystals

Kennedy, T.A., Glaser, E.R., Klein, P.B., Bhargava, R.N.

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 347 KB

1995

189

Nitrogen-Doping Efficiency in ZnSe and ZnTe

Cheong, Byoung Ho, Chang, K.J.

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 345 KB

1995

190

Genration of Oxidation Induced Stacking Faults in CZ Silicon Wafers

Sueoka, K., Akatsuka, M., Nishihara, K., Yamamoto, T., Kobayashi, S.

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 437 KB

1995

191

Recombination-Enhanced Migration of Interstitial Iron in Silicon

Nakashima, H., Sadoh, T., Tsurushima, T.

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 382 KB

1995

192

Defect Production and Annealing in Degenerate Silicon Irradiated with fast Electrons at Low Temperatures

Ehrhart, Peter, Emtsev, Valentin V., Poloskin, D.S., Zillgen, Holger

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 417 KB

1995

193

Introduction of Metastable Vacancy Defects in Electron Irradiated Semi-Insulating GaAs

Saarinen, Kimmo, Kuisma, S., Mäkinen, J., Hautojärvi, Pekka J., Törnqvist, M., Corbel, C.

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 397 KB

1995

194

Control of Defects in GaAs/GaInP Interface Grown by MOVPE

Arai, Takayuki, Uchida, Kazuo, Tokunaga, Hiroki, Matsumoto, Koh

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 357 KB

1995

195

Local Vibrational Modes of 3d Elements in Wurtzite Type ZnO and GaN Crystals

Thurian, P., Kaczmarczyk, G., Siegle, H., Heitz, R., Hoffmann, Andreas, Broser, I., Meyer, B.K., Hoffbauer, R., Scherz, Udo

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 407 KB

1995

196

Photoluminescent Properties of Undoped GaN Prepared by Atmospheric Vapor Phase Epitaxy

Yi, Gyu-Chul, Wessels, Bruce W.

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 293 KB

1995

197

Theoretical Study on Hole Compensation Mechanism: - Stability of Two Nitrogen Atoms at SE Substitutional Site of ZNSE -

Nakao, Taketoshi, Suzuki, Masakatsu, Uenoyama, Takeshi, Funayose, Yusuke

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 307 KB

1995

198

Anomalous Diffusion of Phosphorus in Silicon by Pair Diffusion Model and Decrease in Quasi Vacancy Formation Energy

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 330 KB

1995

199

Structural and Electronic Properties of Carbon-Hydrogen Complex in Silicon

Kaneta, Chioko, Katayama-Yoshida, Hiroshi

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 379 KB

1995

200

Thermal and Optical Emission Processes of Electrons and Holes from EL2 in N- and P-Type GaAs

Okushi, Hideyo, Sekiguchi, Takashi, Tokumaru, Y., Sumino, Koji

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 350 KB

1995

201

Oxygen Related Defect Centers: the Source of Room Temperature Red Photoluminescence in As-Made and Oxidized Porous Silicon

Prokes, S.M., Carlos, W.E.

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 324 KB

1995

202

Evaluation Method of Precipitated Oxygen Concentration in Low Resistivity Silicon Wafers Using X-Ray Diffration

Takeno, Hiroshi, Mizuno, Michihiro, Ushio, Satoshi, Takenaka, Takao

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 354 KB

1995

203

Effects of Activation Annealing on Thermally Stimulated Current in Semi-Insulating LEC GaAs Substrates

Yoshida, H., Kiyama, Makoto, Takebe, T., Yamashita, Masashi, Fujita, K.

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 382 KB

1995

204

Silicon-Related Local Vibrational Mode Absorption in Bulk AlGaAs

Kaczor, P., Żytkiewicz, Z.R., Dobaczewski, L.

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 382 KB

1995

205

Photoluminescence Defect Diagnostics in Poly-Si Thin Films

Ostapenko, Sergei S., Savchuk, A.U., Nowak, G., Lagowski, J., Jastrzebski, L.

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 475 KB

1995

206

Precipitates in Antimony Implanted Silicon

Kikuchi, Yoshio, Uesugi, F., Kaszczyszyn, S., Kase, Masataka, Yoshida, M., Watanabe, K., Hashimoto, I.

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 589 KB

1995

207

Study of the Dislocation Atmospheres in N-Type GaAs by DSL Photoetching, EBIC and Microraman Measurements

Martín, P., Jiménez, J., Frigeri, C., Weyher, J., Sonnenberg, K.

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 372 KB

1995

208

Structural Study of Degraded II-VI Blue-Light Emitters

Tomiya, S., Ukita, M., Okuyama, Hideo, Nakano, K., Itoh, S., Ishibashi, Akira, Morita, E., Ikeda, Masahiko

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 679 KB

1995

209

Theory of Si δ-Doped GaAs

Jones, R., Öberg, Sven

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 390 KB

1995

210

Oxygen Precipitation in CZ Silicon Crystals Contaminated with Iron

Jablonski, J., Shen, Bo, Mchedlidze, Teimuraz, Imai, M., Sumino, Koji

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 451 KB

1995

211

Anomalous Fast Annihilation of Thermal Donors in Carbon-Rich Silicon

Kamiura, Y., Maeda, Tomoyuki, Yamashita, Y., Hashimoto, Fumio

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 385 KB

1995

212

The Role of Point Defects in Non-Stoichiometric III-V Compounds

Prasad, A., Liu, X., Fujioka, H., Jäger, N.D., Nishio, Johji, Weber, Eicke R.

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 415 KB

1995

213

Influence of Simultaneously Implanted As+ Ions on Diffusivity and Activation Efficiency of B Atoms Implanted into Silicon

Yokota, Katsuhiro, Nakamura, T., Miyashita, Fumiyoshi, Hirai, K., Takano, H., Kumagai, M., Ando, Yasuo, Matsuda, Kouji

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 502 KB

1995

214

Nonlinear Zeeman Behaviour of Copper Centers in ZnS and CdS

Telahun, T., Thurian, P., Hoffmann, Andreas, Broser, I., Scherz, Udo

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 358 KB

1995

215

Thermal Precipitation of Excess Arsenic on Dislocations in LEC Grwon GaAs Crystal

Otoki, Y., Sahara, M., Shibata, Misawo, Kuma, S., Kashiwa, M.

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 517 KB

1995

216

Electron-Irradiaton Induced Defects in Fe-Doped Semi-Insulating InP

Kuriyama, K., Sakai, Kazufumi, Kato, Takashi, Iijima, T., Okada, M., Yokoyama, K.

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 350 KB

1995

217

Saturation of Luminescence Quenching Due to Nonradiative Centers in a GaAs/AlGaAs Quantum Well

Kamata, N., Kanoh, E., Hoshino, K., Yamada, K., Nishioka, M., Arakawa, Y.

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 356 KB

1995

218

Photoluminescence and Electron-Spin-Resonance Studies of Defects in Ion-Implanted Thermal SiO2 Films

Nishikawa, Hironobu, Fukui, Hisao, Watanabe, Eiji, Ito, D., Takiyama, M., Ieki, A., Ohki, Y.

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 320 KB

1995

219

Carbon-Hydrogen Deep Level Luminescence Centre in Silicon Responsible for the T-Line

Safonov, A.N., Lightowlers, Edward C., Davies, Gordon

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 328 KB

1995

220

Reactions between Point Defects in Silicon Doped with Germanium

Khirunenko, L.I., Shakhovtsov, V.I., Shumov, V.V., Yashnik, V.I.

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 246 KB

1995

221

Hydrogen Incorporation and Interaction with Impurities and Defects in Silicon Investigated by Photoluminescence Spectroscopy

Lightowlers, Edward C.

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 676 KB

1995

222

Analysis of the Recombination-Active Region Around Extended Defects in Silicon

Kittler, Martin, Seifert, Winfried

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 375 KB

1995

223

Calculations of the Neutral and Charged States of the {H,C} Pair in Silicon

Zhou, Y., Luchsinger, R., Meier, P.F., Suter, H.U., Maric, Djordje M., Estreicher, S.K.

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 376 KB

1995

224

Room Temperature Defect Etching of III-V Compounds and Alloys Grown on Si Substate Using Hydrogen Fluoride and Nitric Acid

Nishikawa, Hironobu, Soga, T., Jimbo, Takashi, Umeno, Masayoshi

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 673 KB

1995

225

Copper Species in Ultra-Pure Germanium Crystals

Shmagin, V.B., Andreev, Boris A., Gavva, V.A., Gusev, A.V., Kotereva, T.V., Pimenov, V.G.

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 341 KB

1995

226

Screening Effect of Binding of P-Si-H Complex in Silicon

Fukata, N., Fujimura, S., Murakami, Kenji

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 327 KB

1995

227

Electronic Properties of GaAs Doped with Copper

Yang, B.H., Gislason, H.P.

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 399 KB

1995

228

Frenkel Pairs in INSB Induced by Neutrino Recoil and Observed by Mössbauer Spectroscopy

Wendeler, L., Sielemann, R., Weyer, G.

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 305 KB

1995

229

Profiling the Deep Levels inSiGe/Si Microstructure by Small-Pulse Deep Level Transient Spectroscopy

Zhang, Rong, Yang, Kai, Qing, Guoyi, Shi, Yi, Gu, Shu Lin, Wang, Rong Hua, Hu, Li Qun, Gao, Weizhong, Zheng, You Dou

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 323 KB

1995

230

Clustering Process of Point Defects in GaP Studied by Transmission Electron Microscopy

Ohno, Y., Takeda, S., Hirata, Masako

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 410 KB

1995

231

Native Point Defect Equilibria and the Phase Extent of Gallium Arsenide

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 611 KB

1995

232

Lattice Sites of Ion Implanted Li in Zn-Rich ZnSe

Jahn, S.G., Wahl, Ulrich, Restle, M., Quintel, H., Hofsäss, H., Wienecke, M., Trojahn, I.

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 443 KB

1995

233

Defect Formation and Recombination Processes in p-Type Modulation-Doped Si Epilayers

Buyanova, I.A., Chen, W.M., Henry, Anne, Ni, W.X., Hansson, G.V., Monemar, Bo

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 401 KB

1995

234

Deformation-Induced Defects in GaSb

Mahony, J., Tessaro, G., Mascher, Peter, Siethoff, H., Brion, H.-G.

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 354 KB

1995

235

Electrical Transport in SixGe1-x Bulk Alloys

Mchedlidze, Teimuraz, Yonenaga, I., Matsui, A., Sumino, Koji

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 377 KB

1995

236

The Migration of Carbon and Self Interstitials in Silicon

Major, Bogusław

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 380 KB

1995

237

DX Centres Versus Shallow D-Centres in AIGaAs Based Quantum Wells

Huant, S., Mandray, A., Martinez, G.

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 525 KB

1995

238

Deep Donor - Acceptor Correlations in Low Temperature GaAs

Korona, K.P., Kaminska, Maria, Baranowski, Jacek M.

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 356 KB

1995

239

Electronic States Associated with Straight Dislocations in P-Type SiliconStudied by Means of Electric-Dipole Spin Resonance

Kveder, Vitaly, Sekiguchi, Takashi, Sumino, Koji

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 413 KB

1995

240

Perturbed Angular Correlation Study of Impurities Interaction in Si

Hanada, R., Shinozuka, T., Fujioka, M.

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 324 KB

1995

241

Stability and Defect Reaction of Two Hydrogen-Carbon Complexes in Silicon

Kamiura, Y., Tsutsue, M., Hayashi, Makoto, Yamashita, Y., Hashimoto, Fumio

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 405 KB

1995

242

TDS and RB Studies of Ar Implanted to Si

Hanada, R., Saito, S., Nagata, S., Yamaguchi, S.

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 320 KB

1995

243

Defect Induced Electron Transport Trough Semiconductor Barriers

Bourgoin, J.C., El Mir, Lassad

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 317 KB

1995

244

Dopant Diffusion and Stacking Fault in Silicon during Thermal Oxidation

Okino, Takahisa, Takaue, R., Onishi, M.

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 296 KB

1995

245

Vacancy Type Defects inGaAs After Electron Irradiation Studied by Positron Lifetime Spectroscopy

Polity, A., Nagel, C., Krause-Rehberg, R.

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 409 KB

1995

246

Vacancy- and Acceptor- H Complxes in Inp

Ewels, C.P., Öberg, Sven, Jones, R., Pajot, B., Briddon, Patrick R.

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 377 KB

1995

247

Substitutional Transition Metal Defects in Silicon Grown-In by the Float Zone Technique

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 484 KB

1995

248

Theory of the NiH2 Complex in Si and the CuH2 Complex in GaAs

Jones, R., Goss, J.P., Öberg, Sven, Briddon, Patrick R., Resende, A.

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 338 KB

1995

249

Defect Studies with Isotopically Designed Semiconductors

Haller, Eugene E.

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 452 KB

1995

250

Carrier Localization in Gallium Nitride

Wetzel, C., Walukiewicz, W., Haller, Eugene E., Ager, J.W., Chen, A., Fischer, S., Yu, P.Y., Jeanloz, R., Grzegory, I., Porowski, Sylwester, Suski, T., Amano, Hiroshi, Akasaki, Isamu

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 382 KB

1995

251

Annealing Behavior of a Ligth ScatteringTomography Detected Defect near the Surface of Si Wafers

Furukawa, Jun, Iwaoka, Noriyuki, Furuya, Hiroshi

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 307 KB

1995

252

High-Performance Al(Ga)As/GaAs Resonant Tunneling Diodes Achieved by the Control of Structural Defects at the Interface

Shinohara, Masanori, Yokoyama, Haruki, Inoue, Naohisa

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 441 KB

1995

253

High Sensitivity Detection of Silicon Surface Reactions by Photoconductance Decay

Norga, Gerd J., Black, M.R., Black, K.A., M'Saad, H., Michel, Jürgen, Kimerling, Lionel C.

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 319 KB

1995

254

New Effect of Interaction between Moving Dislocation and Point Defects in Silicon

Eremenko, V.G., Fedorov, A.V.

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 371 KB

1995

255

Influence of Intrinsic Elastic Stresses on the Interaction between Point Defects in Si

Khirunenko, L.I., Shakhovtsov, V.I., Yashnik, V.I.

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 261 KB

1995

256

Sn Mössbauer Study of Ion Implanted GaN

Fanciulli, M., Lindroos, M., Weyer, G., Moustakas, T.D.

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 330 KB

1995

257

Review of the Influence of Micro Crystal Defects in Silicon Single Crystals on Gate Oxide Integrity

Fusegawa, I., Takano, K., Kimura, Kaoru, Fujimaki, N.

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 533 KB

1995

258

Strain Characterization of Hg1-xFexSe-Layers by Electron Spin Resonance

Hendorfer, G., Jantsch, W., Helzel, W., Li, J.H., Wilamowski, Zbysław, Widmer, T., Schikora, D., Lischka, K.

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 423 KB

1995

259

Photoluminescence of Germanium Doped Gallium Arsenide

Watanabe, Taketo, Suezawa, Masashi, Sumino, Koji

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 384 KB

1995

260

Stucture of the Pb Center: Endor Investigation

Bratus, V.Ya., Ishchenko, S.S., Okulov, S.M., Vorona, I.P., von Bardeleben, Hans Jürgen

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 414 KB

1995

261

High Quality GaAs on Si Grown by CBE

Uchida, H., Adachi, M., Egawa, Takashi, Nishikawa, Hironobu, Jimbo, Takashi, Umeno, Masayoshi

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 291 KB

1995

262

Photo-Induced Iron Atom Motion of Iron-Acceptor Pairs in Silicon

Sakauchi, S., Suezawa, Masashi, Sumino, Koji

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 312 KB

1995

263

Models of Oxygen Loss and Thermal Donor Formation in Silicon by the Clustering of Rapidly Diffusing Oxygen Dimers

McQuaid, S.A., Newman, R.C., Muñoz Merino, Elias

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 463 KB

1995

264

Electronic Properties and Introduction Kinetics of a Metastable Radiation Induced Defect in n-GaAs

Danie Auret, F., Goodman, S.A., Meyer, W.E.

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 403 KB

1995

265

Study of Gallium and Antimony Cluster Formation în GaSb Bulk Crystals Grown from Nonstoichiometric Melts

Bert, N.A., Chaldyshev, V.V., Kunitsyn, A.E., Milvidskaya, A.G., Mil'vidskii, M.G.

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 386 KB

1995

266

Upconversion Induced by Deep Defects in GaAs

Iino, Takayuki, Weber, Joerg

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 439 KB

1995

267

Mechanism of Deep Penetration of Plasma-Induced Defects inGaAs: Minority Carrier Injection Effect

Nakanishi, Hachiro, Wada, Keiji

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 440 KB

1995

268

Piezo-Spectroscopic Study of the V3+ Photoluminescence in GaP:V:S

Steck, S., Rückert, G., Thonke, Klaus, Ulrici, W., Sauer, R.

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 387 KB

1995

269

Intrinsic Acceptors in Semi-Insulating Galliumarsenide Studied by Positron Annihilation and ODMR

Krambrock, K., Le Berre, C., Corbel, C., Saarinen, Kimmo, Hautojärvi, Pekka J.

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 426 KB

1995

270

Zeeman Splitting and Isotope Shift of Optical Transitions at Ni2+ Centers in Cubic ZnS

Schrepel, Christoph, Schöpp, J., Heitz, R., Hoffmann, Andreas, Scherz, Udo

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 391 KB

1995

271

Metastability and Negative-U Properties for Hydrogen-Related Radiation-Induced Defect in Silicon

Markevich, V.P., Medvedeva, I.F., Murin, L.I., Sekiguchi, Takashi, Suezawa, Masashi, Sumino, Koji

Journal:

Materials Science Forum

Year:

1995

Language:

english

File:

PDF, 421 KB

english, 1995

272

Precipitation of Cu, Ni and Fe on Frank-Type Partial Dislocations in Czochralski-Grown Silicon

Shen, Bo, Sekiguchi, Takashi, Sumino, Koji

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 540 KB

1995

273

Extrinsic Self-Trapping of an Electron in Quantum-Well Structures

Shinozuka, Yuzo

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 371 KB

1995

274

Isoelectronic Bound-Multiexciton Systems in Thermally-Treated Czochralski Silicon

Jeyanathan, L., Lightowlers, Edward C., Davies, Gordon

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 379 KB

1995

275

A New Type of Metastability due to Donors in GaAs

Skierbiszewski, Czeslaw, Jantsch, W., Wilamowski, Zbysław, Lübke, K., Suski, T.

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 381 KB

1995

276

Hydrogen Induced Defects in Cobalt Doped Silicon

Jost, W., Weber, Joerg, Lemke, H.

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 396 KB

1995

277

Formation of Hydrogen-Oxygen-Vacancy Complexes in Silicon

Hatakeyama, H., Suezawa, Masashi, Markevich, V.P., Sumino, Koji

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 345 KB

1995

278

Important Nonradiative Grown-In Defects in MBE-Grown Si and SiGe/Si Heterostructures

Chen, W.M., Buyanova, I.A., Henry, Anne, Ni, W.X., Hansson, G.V., Monemar, Bo

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 430 KB

1995

279

Effects of Background Doping Level on ZN Diffusion in GaAs/AlGaAs Multiple-Quantum-Well Structures

Ky, Nguyen Hong

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 427 KB

1995

280

Influence of Al Doping on Deep Levels in MBE GaAs

Qurashi, Umar S., Iqbal, M. Zafar, Baber, N., Andersson, T.G.

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 389 KB

1995

281

Light Emission from Er-Implanted Silicon Using Anodization

Uekusa, S., Yoshida, M., Shimazu, K., Majima, A., Yabuta, K.

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 284 KB

1995

282

Electrically and Optically Detected Magnetic Resonance Studies of GaN-Based Heterostructures

Carlos, W.E., Glaser, E.R., Kennedy, T.A., Nakamura, Satoshi

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 394 KB

1995

283

Carbon Delta-Doping In GaAs and AlAs

Hart, L., Davidson, B.R., Fernández, J.M., Newman, R.C., Button, C.C.

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 401 KB

1995

284

The Role of a 70-80 me V Acceptor in the Photoquenching of EL'

Suemitsu, M., Takahashi, H., Sagae, Y., Miyamoto, N.

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 406 KB

1995

285

Excitation of Rare Earths in Semiconductors by the Excitonic Auger Recombination

Tsimperidis, I., Gregorkiewicz, T., Ammerlaan, C.A.J.

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 372 KB

1995

286

Dopant Diffusion in Strained and Relaxed Si1-xGex

Paine, A.D.N., Morooka, Masami, Willoughby, Arthur F.W., Bonar, Janet M., Phillips, P., Dowsett, M.G., Cooke, G.

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 301 KB

1995

287

Study on the Irradiation Induced Defects in 6H-SiC

Hayashi, N., Watanabe, H., Sakai, Kazufumi, Kuriyama, K., Ikeda, Yasushi, Maekawa, H., Miura, Tadamasa

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 333 KB

1995

288

Phonon Spectroscopy of Low-Energy Excitations of Defects in Semiconductors

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 584 KB

1995

289

Surface Recombination in Semiconductors

Langer, Jerzy M., Walukiewicz, W.

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 451 KB

1995

290

Energy States of Ni and Band Offsets in Zn1-xCdxSe(Ni) and ZnSxSe1-x(Ni) Alloys

Surkova, T.P., Giriat, W., Godlewski, M., Kaczor, P., Surma, M., Permogorov, S.A., Tenishev, L.N.

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 313 KB

1995

291

Rhombic Aggregation of Dislocations in CZ-Si Crystal

Minowa, K., Isomae, Seiichi, Kitano, Michio

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 379 KB

1995

292

Metastability and Electronic Structure of Periodically n-Type and p-Type δ-Doped Layer in GaAs

Fazzio, A., Schmidt, T.M.

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 270 KB

1995

293

Study of Near-Surface Microdefects in Czochralski-Si Wafers After a CMOS Thermal Process

Kitagawara, Y., Aihara, K., Oka, S., Takenaka, Takao

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 424 KB

1995

294

Characterization of Mg+F, Mg+Ar Dual Ion Implanted AlxGa1-xAs(0≤x≤0.75) Layers

Hara, Naoki, Suehiro, Haruyoshi, Kuroda, Shigeru

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 322 KB

1995

295

Luminescence of Doped and Undoped Bulk Crystals of GaN

Teisseyre, H., Suski, T., Perlin, P., Gorczyca, I., Leszczyński, M., Grzegory, I., Jun, J., Porowski, Sylwester

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 374 KB

1995

296

First Principles Investigation of Vacancy Oxygen Defects in Si

Ewels, C.P., Jones, R., Öberg, Sven

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 390 KB

1995

297

Interaction of Iron Donor with Transition-Metal Impurities in Silicon

Ali, Akbar, Iqbal, M. Zafar, Baber, N., Gill, Asghar A.

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 380 KB

1995

298

Dynamics of Hydrogen in Si and GaAs: Results from Muonium Experiments

Lichti, R.L., Schwab, C., Estle, T.L.

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 453 KB

1995

299

Zeeman Spectroscopy and Crystal-Field Model of Neutral Vandium in 6H-Silicon Carbide

Kaufmann, B., Dörnen, Achim, Ham, Frank S.

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 362 KB

1995

300

Ab Initio Study of Cl Impurity at GaAs Surfaces

Ohno, Takahisa, Sasaki, Taizo

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 444 KB

1995

301

Substitutional Gettering of Platinum by Diffusion into Ion-Beam Damaged Silicon

Nielsen, K. Bonde, Holm, B.

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 426 KB

1995

302

Nonradiative Investigations of Photoquenching and Recovery of EL2 Defect Levels in Si-GaAs

Fukayama, A., Ikari, T., Akashi, Y., Futagami, Kengo

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 445 KB

1995

303

Intrinsic Defects in ZnSe, ZnTe, and CdS Doped with Li

Wolf, Herbert, Jost, A., Lermen, R., Filz, T., Ostheimer, V., Wichert, Th.

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 433 KB

1995

304

Growth Parameters Determining the Type of Grown-In Defects in Czockralski Silicon Crystals

Hourai, M., Kajita, E., Nagashima, T., Fujiwara, H., Umeno, S., Sadamitsu, S., Miki, S., Shigematsu, T.

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 531 KB

1995

305

Generation of Ultra-High Acceleration Field for New Extreme Condition Science

Mashimo, Tsutomu, Okazaki, S.

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 282 KB

1995

306

Gettering of Transition Metals in Multicrystalline Silicon

McHugo, Scott A., Hieslmair, H., Weber, Eicke R.

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 414 KB

1995

307

Charactrization of Residual Transition Metal Ions in GaN and AIN

Baur, J., Kaufmann, Ulrich, Kunzer, M., Schneider, J., Amano, Hiroshi, Akasaki, Isamu, Detchprohm, T., Hiramatsu, K.

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 426 KB

1995

308

Influence of Cu Contamination and Hydrogenation on Recombination Activity of Misfit Dislocations in SiGe/Si Epilayers

Kittler, Martin, Ulhaq-Bouillet, C., Higgs, V.

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 434 KB

1995

309

Generation of Deep Level by Nitrogen Diffusion in Si

Fuma, N., Tashiro, K., Kakumoto, K., Takano, Y.

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 307 KB

1995

310

Holes Induced by Strong Near Band Gap Light in GaAs:O. EL2 Related?

Machado, W.V.M., Amato, M.A., Landim, A.F.S., Ridley, B.K.

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 423 KB

1995

311

Frenkel Defects in Low Temperature e-- Irradiated Ge and Si Investigated by X-Ray Diffraction

Bausch, St., Zillgen, Holger, Ehrhart, Peter

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 391 KB

1995

312

Electric-Dipole Spin Resonance of Defects Correlated with the Diffusion of ZN Into SI

Schroth, H., App, R., Köpf, A., Lassmann, K., Bracht, H., Stolwijk, Nicolaas

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 404 KB

1995

313

Electron Energy Dependennce of Impurity Concentrations in Semiconductors by Electron Beam Doping (Superdiffusion)

Wada, Takao, Yasuda, Kazuhiro, Fujimoto, Hiroshi, Masuda, Haruho

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 328 KB

1995

314

NMR Study of Impurity Electronic Structure and Dynamics

Warren, W.W., Fuller, S.E., Göbel, A., Bindley, U., Furdyna, J.K.

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 327 KB

1995

315

Generation of EL2- Level Upon Rapid Thermal Annealing in Low-Temperature GaAs Layers Grown by MBE

Lin, T.-C., Indou, S., Okumura, T.

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 379 KB

1995

316

Studies of Deep Levels in n-GaAs by SADLTS

Sato, K., Tanaka, K., Yoshino, J., Okamoto, Yoshihiro, Morimoto, J., Miyakawa, T.

Journal:

Materials Science Forum

Year:

1995

Language:

english

File:

PDF, 354 KB

english, 1995

317

Photoluminescence of Deformed Si-Ge Alloy

Tanaka, Kazuhiro, Matui, Akira, Suezawa, Masashi, Sumino, Koji

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 318 KB

1995

318

First-Principles Calculation on Hydrogen Passivation Mechanism in Mg Doped GaN

Okamoto, Yoshihiro, Saito, Mineo, Oshiyama, Atsushi

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 386 KB

1995

319

Spatial Distribution of Microdefects around Dislocations in Si-Doped GaAs

Toba, R., Warashina, M., Tajima, Michio

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 461 KB

1995

320

Ni Related Centers in Synthetic Diamond

Hofmann, D.M., Christmann, P., Volm, D., Pressel, Klaus, Pereira, Luís, Santos, Leonel, Pereira, E.

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 292 KB

1995

321

Ab-Initio Total Energy Calculation and the Hyperfine Interactions of Iron-Acceptor Pairs in Silicon

Weihrich, H., Overhof, Harald

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 365 KB

1995

322

A First-Priciples Study of Carbon Impurities in GaAs and InAs

Chang, K.J., Lee, Sang Guk, Cheong, Byoung Ho

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 354 KB

1995

323

Lattice Sites of Li in Si and Ge

Wahl, Ulrich, Jahn, S.G., Restle, M., Quintel, H., Hofsäss, H.

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 414 KB

1995

324

Electric Field Broadening of Gallium Acceptor States in Compensated Ge: Ga, As

Itoh, K.M., Walukiewicz, W., Beeman, J.W., Haller, Eugene E., Kim, Hyun Jung, Mayur, A.J., Sciacca, M.D., Ramdas, A.K., Buczko, Ryszard, Farmer, J.W., Ozhogin, V.I.

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 389 KB

1995

325

Free Electrons and Resonant Donor State in Gallium Nitride

Perlin, P., Suski, T., Teisseyre, H., Leszczyński, M., Grzegory, I., Jun, J., Boćkowski, M., Porowski, Sylwester, Boguslawski, P., Bernholc, J., Moustakas, T.D.

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 146 KB

1995

326

Scratch-Related Effects on Silicon Surface

Shreter, Y.G., Rebane, Y.T., Tarhin, D.V., Cherns, D., Steeds, John W.

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 365 KB

1995

327

The Structure and Bonding of Iron-Acceptor Pairs in Silicon

Zhao, S., Assali, Lucy V.C., Kimerling, Lionel C.

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 405 KB

1995

328

Radioactive Isotopes in Photoluminescence Experiemts: Identification of Defects Levels

Magerle, R., Burchard, A., Kerle, T., Pfeiffer, Wulf, Deicher, Manfred

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 433 KB

1995

329

Hg Vacancies in Hg1-xCdxTe Studied by Positron Annihilation

Krause-Rehberg, R., Abgarjan, Th., Polity, A., Neubert, M.

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 397 KB

1995

330

Measurements of Polishing-Induced Residual Damages in Silicon Wafers Using Noncontact Photoconductivity Amplitude Technique

Ogita, Y., Nakano, M., Masumura, H.

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 324 KB

1995

331

The Electronic Structure of Deep Donors and the Nature of the Anion Vacancy in II-VI Compound Semiconductors

Illgner, M., Overhof, Harald

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 363 KB

1995

332

Ab-Initio Total Energy Calculations and the Hyperfine Interaction of Interstitial Iron in Silicon

Weihrich, H., Overhof, Harald

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 443 KB

1995

333

Photoreflectance, Reflectivity and Photoluminescence of MOVPE Grown ZnSe/GaAs Epilayers and ZnSeS/ZnSe Superlattices

Boemare, C., Nazaré, Maria Helena, Taudt, W., Söllner, J., Heuken, M.

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 311 KB

1995

334

Surface Diffusion of Atoms by Electron Beam Doping (Superdiffusion)

Wada, Takao, Fujimoto, Hiroshi, Masuda, Haruho

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 481 KB

1995

335

Endor Identification of a Hydrogen-Passivated Thermal Donor

Martynov, Yu.V., Gregorkiewicz, T., Ammerlaan, C.A.J.

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 333 KB

1995

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