Comparison of Different Scattering Mechanisms in the Ge...

IEEE Transactions on Electron Devices 2015 / 4 Vol. 62; Iss. 4

Comparison of Different Scattering Mechanisms in the Ge (111), (110), and (100) Inversion Layers of nMOSFETs With Si nMOSFETs Under High Normal Electric Fields

Wu, Wangran, Li, Xiangdong, Sun, Jiabao, Zhang, Rui, Shi, Yi, Zhao, Yi
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Volume:
62
Language:
english
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/ted.2015.2398733
Date:
April, 2015
File:
PDF, 2.57 MB
english, 2015
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