Volume 62; Issue 4

IEEE Transactions on Electron Devices

Volume 62; Issue 4

1

Gate-Source Distance Scaling Effects in H-Terminated Diamond MESFETs

Verona, Claudio, Ciccognani, Walter, Colangeli, Sergio, Pietrantonio, Fabio Di, Giovine, Ennio, Limiti, Ernesto, Marinelli, Marco, Verona-Rinati, Gianluca

Journal:

IEEE Transactions on Electron Devices

Year:

2015

Language:

english

File:

PDF, 1.25 MB

english, 2015

2

Asymmetric Dual-Spacer Trigate FinFET Device-Circuit Codesign and Its Variability Analysis

Pal, Pankaj Kumar, Kaushik, Brajesh Kumar, Dasgupta, Sudeb

Journal:

IEEE Transactions on Electron Devices

Year:

2015

Language:

english

File:

PDF, 3.15 MB

english, 2015

3

Computational Study of Effects of Surface Roughness and Impurity Scattering in Si Double-Gate Junctionless Transistors

Ichii, Masato, Ishida, Ryoma, Tsuchiya, Hideaki, Kamakura, Yoshinari, Mori, Nobuya, Ogawa, Matsuto

Journal:

IEEE Transactions on Electron Devices

Year:

2015

Language:

english

File:

PDF, 1.69 MB

english, 2015

4

Noise Modeling of Graphene Resonant Channel Transistors

Lekas, Michael, Lee, Sunwoo, Cha, Wujoon, Hone, James, Shepard, Kenneth

Journal:

IEEE Transactions on Electron Devices

Year:

2015

Language:

english

File:

PDF, 2.64 MB

english, 2015

5

Design of GeSn-Based Heterojunction-Enhanced N-Channel Tunneling FET With Improved Subthreshold Swing and ON-State Current

Liu, Mingshan, Liu, Yan, Wang, Hongjuan, Zhang, Qingfang, Zhang, Chunfu, Hu, Shengdong, Hao, Yue, Han, Genquan

Journal:

IEEE Transactions on Electron Devices

Year:

2015

Language:

english

File:

PDF, 2.67 MB

english, 2015

6

Modeling and Analysis of PDN Impedance and Switching Noise in TSV-Based 3-D Integration

He, Huanyu, Lu, James Jian-Qiang

Journal:

IEEE Transactions on Electron Devices

Year:

2015

Language:

english

File:

PDF, 3.58 MB

english, 2015

7

Surface Functionalization of Ion-Sensitive Floating-Gate Field-Effect Transistors With Organic Electronics

Qi Zhang,, Majumdar, Himadri S., Kaisti, Matti, Prabhu, Alok, Ivaska, Ari, Osterbacka, Ronald, Rahman, Arifur, Levon, Kalle

Journal:

IEEE Transactions on Electron Devices

Year:

2015

Language:

english

File:

PDF, 2.19 MB

english, 2015

8

Comparison of Different Scattering Mechanisms in the Ge (111), (110), and (100) Inversion Layers of nMOSFETs With Si nMOSFETs Under High Normal Electric Fields

Wu, Wangran, Li, Xiangdong, Sun, Jiabao, Zhang, Rui, Shi, Yi, Zhao, Yi

Journal:

IEEE Transactions on Electron Devices

Year:

2015

Language:

english

File:

PDF, 2.57 MB

english, 2015

9

A Microfabricated Planar Helix Slow-Wave Structure to Avoid Dielectric Charging in TWTs

Zhao, Chen, Aditya, Sheel, Chua, Ciersiang

Journal:

IEEE Transactions on Electron Devices

Year:

2015

Language:

english

File:

PDF, 1.60 MB

english, 2015

10

Robust High Speed Ternary Magnetic Content Addressable Memory

Gupta, Mohit Kumar, Hasan, Mohd

Journal:

IEEE Transactions on Electron Devices

Year:

2015

Language:

english

File:

PDF, 2.31 MB

english, 2015

11

A GaN Pulse Width Modulation Integrated Circuit for GaN Power Converters

Wang, Hanxing, Kwan, Alex Man Ho, Jiang, Qimeng, Chen, Kevin J.

Journal:

IEEE Transactions on Electron Devices

Year:

2015

Language:

english

File:

PDF, 4.24 MB

english, 2015

12

Morphological Evolution and Its Impacts on Performance of Polymer Solar Cells

Khatiwada, Devendra, Venkatesan, Swaminathan, Chen, Jihua, Chen, Qiliang, Adhikari, Nirmal, Dubey, Ashish, Mitul, Abu Farzan, Mohammad, Lal, Sun, Jianyuan, Zhang, Cheng, Luo, Linbao, Qiao, Qiquan

Journal:

IEEE Transactions on Electron Devices

Year:

2015

Language:

english

File:

PDF, 3.00 MB

english, 2015

13

TCAD Strain Calibration Versus Nanobeam Diffraction of Source/Drain Stressors for Ge MOSFETs

Buhler, Rudolf Theoderich, Eneman, Geert, Favia, Paola, Witters, Liesbeth Johanna, Vincent, Benjamin, Hikavyy, Andriy, Loo, Roger, Bender, Hugo, Collaert, Nadine, Simoen, Eddy, Martino, Joao Antonio,

Journal:

IEEE Transactions on Electron Devices

Year:

2015

Language:

english

File:

PDF, 2.01 MB

english, 2015

14

Ultrathin Crystalline Silicon Heterojunction Solar Cell Integrated on Silicon-on-Insulator Substrate

Duan, Weiyuan, Bian, Jiantao, Yu, Jian, Shi, Jianhua, Liu, Zhengxin

Journal:

IEEE Transactions on Electron Devices

Year:

2015

Language:

english

File:

PDF, 1.12 MB

english, 2015

15

Back-Gate Effect on $R_{\mathrm {{\mathrm{{\scriptscriptstyle ON}},sp}}}$ and BV for Thin Layer SOI Field p-Channel LDMOS

Zhou, Xin, Qiao, Ming, He, Yitao, Wang, Zhuo, Li, Zhaoji, Zhang, Bo

Journal:

IEEE Transactions on Electron Devices

Year:

2015

Language:

english

File:

PDF, 2.09 MB

english, 2015

16

Plasma-Nitrided Ga2O3(Gd2O3) as Interfacial Passivation Layer for InGaAs Metal–Oxide– Semiconductor Capacitor With HfTiON Gate Dielectric

Wang, Li-Sheng, Xu, Jing-Ping, Liu, Lu, Lu, Han-Han, Lai, Pui-To, Tang, Wing-Man

Journal:

IEEE Transactions on Electron Devices

Year:

2015

Language:

english

File:

PDF, 1.38 MB

english, 2015

17

Transistor Matching and Fin Angle Variation in FinFET Technology

Agarwal, Samarth, Hook, Terence B., Bajaj, Mohit, McStay, Kevin, Weike Wang,, Yanting Zhang,

Journal:

IEEE Transactions on Electron Devices

Year:

2015

Language:

english

File:

PDF, 558 KB

english, 2015

18

An Improved ICP Etching for Mesa-Terminated 4H-SiC p-i-n Diodes

Han, Chao, Zhang, Yuming, Song, Qingwen, Zhang, Yimen, Tang, Xiaoyan, Yang, Fei, Niu, Yingxi

Journal:

IEEE Transactions on Electron Devices

Year:

2015

Language:

english

File:

PDF, 2.39 MB

english, 2015

19

Modeling Minority Carriers Related Capacitive Effects for Transient Substrate Currents in Smart Power ICs

Stefanucci, Camillo, Buccella, Pietro, Kayal, Maher, Sallese, Jean-Michel

Journal:

IEEE Transactions on Electron Devices

Year:

2015

Language:

english

File:

PDF, 1.13 MB

english, 2015

20

Threshold Voltage and DIBL Variability Modeling Based on Forward and Reverse Measurements for SRAM and Analog MOSFETs

Damrongplasit, Nattapol, Zamudio, Luis, Liu, Tsu-Jae King, Balasubramanian, Sriram

Journal:

IEEE Transactions on Electron Devices

Year:

2015

Language:

english

File:

PDF, 2.88 MB

english, 2015

21

Charge Trapping Memory Characteristics of Amorphous-Indium–Gallium–Zinc Oxide Thin-Film Transistors With Defect-Engineered Alumina Dielectric

Li, Ya, Pei, Yanli, Hu, Ruiqin, Chen, Zimin, Ni, Yiqiang, Lin, Jiayong, Chen, Yiting, Zhang, Xiaoke, Shen, Zhen, Liang, Jun, Fan, Bingfeng, Wang, Gang, Duan, He

Journal:

IEEE Transactions on Electron Devices

Year:

2015

Language:

english

File:

PDF, 1.15 MB

english, 2015

22

Terahertz Switch Based on Waveguide-Cavity-Waveguide Comprising Cylindrical Spoof Surface Plasmon Polariton

Aghadjani, Mahdi, Mazumder, Pinaki

Journal:

IEEE Transactions on Electron Devices

Year:

2015

Language:

english

File:

PDF, 1.20 MB

english, 2015

23

a-InGaZnO Thin-Film Transistor-Based Operational Amplifier for an Adaptive DC–DC Converter in Display Driving Systems

Kim, Kichan, Choi, Keun-Yeong, Lee, Hojin

Journal:

IEEE Transactions on Electron Devices

Year:

2015

Language:

english

File:

PDF, 1.91 MB

english, 2015

24

Temperature Dependence and Dynamic Behavior of Full Well Capacity in Pinned Photodiode CMOS Image Sensors

Pelamatti, Alice, Belloir, Jean-Marc, Messien, Camille, Goiffon, Vincent, Estribeau, Magali, Magnan, Pierre, Virmontois, Cedric, Saint-Pe, Olivier, Paillet, Philippe

Journal:

IEEE Transactions on Electron Devices

Year:

2015

Language:

english

File:

PDF, 3.17 MB

english, 2015

25

A Five-Parameter Model of the AlGaN/GaN HFET

Bilbro, Griff L., Trew, Robert J.

Journal:

IEEE Transactions on Electron Devices

Year:

2015

Language:

english

File:

PDF, 1.06 MB

english, 2015

26

Influence of High-Frequency Characteristic of a Cavity on the Phase Shift in the Relativistic Klystron Amplifier

Qi, Zumin, Zhang, Jun, Zhong, Huihuang, Zhu, Danni, Zhang, Wei, Zeng, Fanzheng

Journal:

IEEE Transactions on Electron Devices

Year:

2015

Language:

english

File:

PDF, 1.42 MB

english, 2015

27

Influence of Preferred Gate Metal Grain Orientation on Tunneling FETs

Choi, Kyoung Min, Lee, Won-Sok, Lee, Keun-Ho, Park, Young-Kwan, Choi, Woo Young

Journal:

IEEE Transactions on Electron Devices

Year:

2015

Language:

english

File:

PDF, 1.25 MB

english, 2015

28

Highly Efficient and Adaptive Numerical Scheme to Analyze Multipactor in Waveguide Devices

You, Jian Wei, Wang, Hong Guang, Zhang, Jian Feng, Li, Yun, Cui, Wan Zhao, Cui, Tie Jun

Journal:

IEEE Transactions on Electron Devices

Year:

2015

Language:

english

File:

PDF, 2.65 MB

english, 2015

29

Erratum to “Additional Nitrogen Ion-Implantation Treatment in STI to Relax the Intrinsic Compressive Stress for n-MOSFETs” [Aug 12 2033-2036]

Liao, M.-H., Chen, C. H., Chang, L. C., Yang, C., Kao, S. C.

Journal:

IEEE Transactions on Electron Devices

Year:

2015

Language:

english

File:

PDF, 149 KB

english, 2015

30

Improvement in Field-Effect Mobility of Indium Zinc Oxide Transistor by Titanium Metal Reaction Method

Ji, Hyuk, Hwang, Ah Young, Lee, Chang Kyu, Yun, Pil Sang, Bae, Jong Uk, Park, Kwon-Shik, Jeong, Jae Kyeong

Journal:

IEEE Transactions on Electron Devices

Year:

2015

Language:

english

File:

PDF, 1.87 MB

english, 2015

31

Analysis and Modeling of the Narrow Width Effect in Gate-First HKMG nMOS Transistors

Sivanaresh, M. Satya, Mohapatra, Nihar Ranjan

Journal:

IEEE Transactions on Electron Devices

Year:

2015

Language:

english

File:

PDF, 1.94 MB

english, 2015

32

A Combined Process of Liftoff and Printing for the Fabrication of Scalable Inkjet Printed Microstructures on a Flexible Substrate

Fu, Yu-Min, Liang, Yen R., Cheng, Yu-Ting, Wu, Pu-Wei

Journal:

IEEE Transactions on Electron Devices

Year:

2015

Language:

english

File:

PDF, 3.83 MB

english, 2015

33

IEEE Transactions on Electron Devices information for authors

Journal:

IEEE Transactions on Electron Devices

Year:

2015

Language:

english

File:

PDF, 116 KB

english, 2015

34

A Study of the Effects of Helix Misalignment on the Cold Parameters of a Sheath Helix Slow-Wave Structure

Wei, Wanghe, Wei, Yanyu, Wang, Yuanyuan, Wang, Wenxiang, Gong, Yubin

Journal:

IEEE Transactions on Electron Devices

Year:

2015

Language:

english

File:

PDF, 1.09 MB

english, 2015

35

Magnetic Focusing Simulator: A 3-D Finite-Element Permanent-Magnet Focusing System Design Tool

Chen, Wen-Long, Hu, Quan, Hu, Yu-Lu, Huang, Tao, Xu, Li, Li, Jian-Qing, Li, Bin

Journal:

IEEE Transactions on Electron Devices

Year:

2015

Language:

english

File:

PDF, 2.72 MB

english, 2015

36

IEEE Transactions on Electron Devices publication information

Journal:

IEEE Transactions on Electron Devices

Year:

2015

Language:

english

File:

PDF, 151 KB

english, 2015

37

Negative Differential Resistance in Dense Short Wave Infrared HgCdTe Planar Photodiode Arrays

Wichman, Adam R., Pinkie, Benjamin J., Bellotti, Enrico

Journal:

IEEE Transactions on Electron Devices

Year:

2015

Language:

english

File:

PDF, 970 KB

english, 2015

38

Table of contents

Journal:

IEEE Transactions on Electron Devices

Year:

2015

Language:

english

File:

PDF, 157 KB

english, 2015

39

Blank page

Journal:

IEEE Transactions on Electron Devices

Year:

2015

File:

PDF, 8 KB

2015

40

Improving ESD Robustness of pMOS Device With Embedded SCR in 28-nm High- $k$ /Metal Gate CMOS Process

Lin, Chun-Yu, Chang, Pin-Hsin, Chang, Rong-Kun

Journal:

IEEE Transactions on Electron Devices

Year:

2015

Language:

english

File:

PDF, 1.38 MB

english, 2015

41

Piezoresistive Sensor Based on Conductive Polymer Composite With Transverse Electrodes

Journal:

IEEE Transactions on Electron Devices

Year:

2015

Language:

english

File:

PDF, 1.52 MB

english, 2015

42

An Ultra-Low Specific ON-Resistance LDMOST With Self-Driven Split Gate

Du, Wenfang, Lyu, Xinjiang, Ng, Wai Tung, Chen, Xingbi

Journal:

IEEE Transactions on Electron Devices

Year:

2015

Language:

english

File:

PDF, 1.46 MB

english, 2015

43

Investigation of the Turn-ON of T-RAM Cells Under Transient Conditions

Mulaosmanovic, Halid, Compagnoni, Christian Monzio, Castellani, Niccolo, Paolucci, Giovanni M., Carnevale, Gianpietro, Fantini, Paolo, Ventrice, Domenico, Lacaita, Andrea L., Spinelli, Alessandro S.,

Journal:

IEEE Transactions on Electron Devices

Year:

2015

Language:

english

File:

PDF, 2.93 MB

english, 2015

44

Investigation of Temperature Dependence, Device Scalability, and Modeling of Semifloating-Gate Transistor Memory Cell

Lin, Xi, Liu, Xiao-Yong, Zhang, Chun-Min, Liu, Lei, Shi, Jin-Shan, Zhang, Shuai, Wang, Wen-Bo, Bu, Wei-Hai, Wu, Jun, Gong, Yi, Wang, Peng-Fei, Wu, Han-Ming, Zhang, David-Wei

Journal:

IEEE Transactions on Electron Devices

Year:

2015

Language:

english

File:

PDF, 3.55 MB

english, 2015

45

Extraction of Effective Mobility from nMOSFETs With Leaky Gate Dielectric Using Time Domain Reflectometry

Kim, Yonghun, Lee, Young Gon, Jung, Ukjin, Kim, Jin Ju, Choe, Minhyeok, Lee, Kyong Taek, Pae, Sangwoo, Park, Jongwoo, Lee, Byoung Hun

Journal:

IEEE Transactions on Electron Devices

Year:

2015

Language:

english

File:

PDF, 1.63 MB

english, 2015

46

On the Cryogenic RF Linearity of SiGe HBTs in a Fourth-Generation 90-nm SiGe BiCMOS Technology

Cardoso, Adilson S., Omprakash, Anup P., Chakraborty, Partha Sarathi, Karaulac, Nedeljko, Fleischhauer, David M., Ildefonso, Adrian, Zeinolabedinzadeh, Saeed, Oakley, Michael A., Bantu, Tikurete G., L

Journal:

IEEE Transactions on Electron Devices

Year:

2015

Language:

english

File:

PDF, 2.86 MB

english, 2015

47

High- $Q$ Inductors on Locally Semi-Insulated Si Substrate by Helium-3 Bombardment for RF CMOS Integrated Circuits

Li, Ning, Okada, Kenichi, Inoue, Takeshi, Hirano, Takuichi, Bu, Qinghong, Narayanan, Aravind Tharayil, Siriburanon, Teerachot, Sakane, Hitoshi, Matsuzawa, Akira

Journal:

IEEE Transactions on Electron Devices

Year:

2015

Language:

english

File:

PDF, 4.95 MB

english, 2015

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