Analysis of static noise margin improvement for low voltage...

Solid-State Electronics 2015 / 07 Vol. 109

Analysis of static noise margin improvement for low voltage SRAM composed of nano-scale MOSFETs with ideal subthreshold factor and small variability

Tanaka, Chika, Saitoh, Masumi, Ota, Kensuke, Numata, Toshinori
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Volume:
109
Language:
english
Journal:
Solid-State Electronics
DOI:
10.1016/j.sse.2015.03.013
Date:
July, 2015
File:
PDF, 961 KB
english, 2015
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