Volume 109

Solid-State Electronics

Volume 109

1

A model of the off-behaviour of 4H–SiC power JFETs

Bellone, Salvatore, Di Benedetto, Luigi, Licciardo, Gian Domenico

Journal:

Solid-State Electronics

Year:

2015

Language:

english

File:

PDF, 1.80 MB

english, 2015

2

Effects of dielectric material properties on graphene transistor performance

Jang, Sung Kyu, Jeon, Jaeho, Jeon, Su Min, Song, Young Jae, Lee, Sungjoo

Journal:

Solid-State Electronics

Year:

2015

Language:

english

File:

PDF, 1.01 MB

english, 2015

3

Analysis of different forward current–voltage behaviours of Al implanted 4H-SiC vertical p–i–n diodes

Megherbi, M.L., Pezzimenti, F., Dehimi, L., Rao, S., Della Corte, F.G.

Journal:

Solid-State Electronics

Year:

2015

Language:

english

File:

PDF, 934 KB

english, 2015

4

Analysis of static noise margin improvement for low voltage SRAM composed of nano-scale MOSFETs with ideal subthreshold factor and small variability

Tanaka, Chika, Saitoh, Masumi, Ota, Kensuke, Numata, Toshinori

Journal:

Solid-State Electronics

Year:

2015

Language:

english

File:

PDF, 961 KB

english, 2015

5

Investigation of proton irradiation effects on InP/InGaAs double heterojunction bipolar transistors

Liu, Min, Zhang, Yuming, Lu, Hongliang, Zhang, Yimen, Zhang, Jincan, Ren, Xiaotang

Journal:

Solid-State Electronics

Year:

2015

Language:

english

File:

PDF, 1.36 MB

english, 2015

6

Effect of Ag doping and insulator buffer layer on the memory mechanism of polymer nanocomposites

Kaur, Ramneek, Kaur, Jagdish, Tripathi, S.K.

Journal:

Solid-State Electronics

Year:

2015

Language:

english

File:

PDF, 2.42 MB

english, 2015

7

Word line program disturbance based data retention error recovery strategy for MLC NAND Flash

Ma, Haozhi, Pan, Liyang, Song, Changlai, Gao, Zhongyi, Wu, Dong, Xu, Jun

Journal:

Solid-State Electronics

Year:

2015

Language:

english

File:

PDF, 1012 KB

english, 2015

8

Impact of active layer thickness in thin-film transistors based on Zinc Oxide by ultrasonic spray pyrolysis

Dominguez, Miguel A., Flores, Francisco, Luna, Adan, Martinez, Javier, Luna-Lopez, Jose A., Alcantara, Salvador, Rosales, Pedro, Reyes, Claudia, Orduña, Abdu

Journal:

Solid-State Electronics

Year:

2015

Language:

english

File:

PDF, 589 KB

english, 2015

9

Study on interface characteristics in amorphous indium–gallium–zinc oxide thin-film transistors by using low-frequency noise and temperature dependent mobility measurements

Wu, Chenfei, Huang, Xiaoming, Lu, Hai, Yu, Guang, Ren, Fangfang, Chen, Dunjun, Zhang, Rong, Zheng, Youdou

Journal:

Solid-State Electronics

Year:

2015

Language:

english

File:

PDF, 1.24 MB

english, 2015

10

Nonvolatile bipolar resistive switching in Ba-doped BiFeO3 thin films

Deng, Haoliang, Zhang, Ming, Wei, Jizhou, Chu, Shangjie, Du, Minyong, Yan, Hui

Journal:

Solid-State Electronics

Year:

2015

Language:

english

File:

PDF, 911 KB

english, 2015

11

Characterizing traps causing random telegraph noise during trap-assisted tunneling gate-induced drain leakage

Yoo, Sung-Won, Shin, Joonha, Seo, Youngsoo, Kim, Hyunsuk, Jeon, Sangbin, Kim, Hyunsoo, Shin, Hyungcheol

Journal:

Solid-State Electronics

Year:

2015

Language:

english

File:

PDF, 1.02 MB

english, 2015

12

The research on temperature distribution of GaN-based blue laser diode

Shi, Dong, Feng, Shiwei, Qiao, Yanbin, Wen, Pengyan

Journal:

Solid-State Electronics

Year:

2015

Language:

english

File:

PDF, 1.06 MB

english, 2015

13

A comparison of two crystals of 6,13-bis (tri-isopropylsilylethynyl) pentacene (TIPS-pentacene) prepared for organic field effect transistors (OFETs)

Murtaza, Ghulam, Ahmad, Ishtiaq, Wu, Jiake

Journal:

Solid-State Electronics

Year:

2015

Language:

english

File:

PDF, 1.28 MB

english, 2015

14

Low operation voltage of GaN-based LEDs with Al-doped ZnO upper contact directly on p-type GaN without insert layer

Chen, P.H., Chen, Yu An, Chang, L.C., Lai, W.C., Kuo, Cheng Huang

Journal:

Solid-State Electronics

Year:

2015

Language:

english

File:

PDF, 841 KB

english, 2015

15

Simulation study of GaN-based HFETs with graded AlGaN barrier

Zhou, Xingye, Feng, Zhihong, Fang, Yulong, Wang, Yuangang, Lv, Yuanjie, Dun, Shaobo, Gu, Guodong, Tan, Xin, Song, Xubo, Yin, Jiayun, Cai, Shujun

Journal:

Solid-State Electronics

Year:

2015

Language:

english

File:

PDF, 959 KB

english, 2015

16

A sum-over-paths algorithm for third-order impulse-response moment extraction within RC IC-interconnect networks

Wojcik, E.A., Ni, D., Lam, T.M., Le Coz, Y.L.

Journal:

Solid-State Electronics

Year:

2015

Language:

english

File:

PDF, 867 KB

english, 2015

17

Enhanced opto-electrical properties of graphene electrode InGaN/GaN LEDs with a NiOx inter-layer

Wu, Caichuan, Liu, Fengyuan, Liu, Bin, Zhuang, Zhe, Dai, Jiangping, Tao, Tao, Zhang, Guogang, Xie, Zili, Wang, Xinran, Zhang, Rong

Journal:

Solid-State Electronics

Year:

2015

Language:

english

File:

PDF, 1.88 MB

english, 2015

18

Editorial Board

Journal:

Solid-State Electronics

Year:

2015

Language:

english

File:

PDF, 62 KB

english, 2015

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